Flip-chip light emitting device

Abstract

A flip-chip light emitting device including: a substrate; an n-type semiconductor layer formed on a top surface of the substrate; an active layer formed on a top surface of the n-type semiconductor layer; a p-type semiconductor layer formed on a top surface of the active layer; a p-type electrode formed on a top surface of the p-type semiconductor layer; and an n-type electrode formed on an exposed portion of the top surface of the n-type semiconductor layer is provided. The p-type electrode includes: an ohmic contact layer formed with a predetermined width along an edge of the top surface of the p-type semiconductor layer near to the n-type electrode; and a reflective layer covering the ohmic contact layer and a portion of the top surface of the p-type semiconductor layer not covered by the ohmic contact layer.

Dependencies are inferred from the claim text.