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AssigneeNissan Motor Co., Ltd.
InventorsYoshio Shimoida, Masakatsu Hoshi, Tetsuya Hayashi, Hideaki Tanaka, Shigeharu Yamagami
Estimating the term…
A semiconductor device, includes: a first conductivity-semiconductor substrate; a hetero semiconductor region for forming a hetero junction with the first conductivity-semiconductor substrate; a gate electrode adjacent to a part of the hetero junction by way of a gate insulating film; a drain electrode connecting to the first conductivity-semiconductor substrate; a source electrode connecting to the hetero semiconductor region; and a second conductivity-semiconductor region formed on a part of a first face of the first conductivity-semiconductor substrate in such a configuration as to oppose the gate electrode via the gate insulating film, the gate insulating film, the hetero semiconductor region and the first conductivity-semiconductor substrate contacting each other to thereby form a triple contact point. A first face of the second conductivity-semiconductor region has such an impurity concentration that allows a field from the gate electrode to form an inversion layer on the first face of the second conductivity-semiconductor region.
A semiconductor device, comprising:
Dependencies are inferred from the claim text.