Display device and method of manufacturing the same
AssigneeSony Corporation
InventorTsutomu Tanaka
Life of this patent
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Abstract
Disclosed herein is a display device, including a display element, a first scanning line, a second scanning line, a data signal line, a switching element having a first terminal and a second terminal of a first conduction type, the first terminal being connected to the data signal line, for being held in a conducting state or a non-conducting state according to a voltage applied to the first scanning line, and a storage capacitance having a first electrode and a second electrode that shares the second scanning line, wherein the second terminal of the switching element is connected to the display element and connected to the first electrode of the storage capacitance including a semiconductor film of a second conduction type different from the second terminal.
Claims6
1-9. (canceled)
A method of manufacturing a display device, said method comprising:
- forming a conductive first scanning line and a conductive second scanning line arranged in parallel with each other,
- forming a first insulating film covering said first scanning line and said second scanning line, and
- forming a semiconductor film covering said first insulating film;
- forming a first protective mask for protecting a first channel region of said semiconductor film, the first channel region being opposed to said first scanning line;
- and
- injecting an impurity of a first conduction type into a switching element region for forming a switching element in said semiconductor film,
- forming a second protective mask for protecting a second channel region of said semiconductor film, the second channel region being opposed to said second scanning line;
- and
- injecting an impurity of a second conduction type into a switching element region for forming a switching element in said semiconductor film.
A method of manufacturing a display device, said method comprising:
- forming a semiconductor film,
- forming an insulating film covering said semiconductor film, and
- forming a conductive first scanning line and a conductive second scanning line arranged in parallel with each other on over said insulating film;
- and
- injecting, from a side of said first scanning line and said second scanning line, an impurity of a first conduction type into a switching element region of the semiconductor film for forming a switching element and
- injecting an impurity of a second conduction type into a storage capacitance region for forming a storage capacitance.
Dependencies are inferred from the claim text.