Semiconductor device having a modified dielectric film
AssigneeElpida Memory, Inc.
InventorMasateru Ando
Life of this patent
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Abstract
A semiconductor device has a plurality of interconnect layers each including a plurality of interconnect lines. The semiconductor device includes a dielectric film (HDP film) formed by means of high density plasma-enhanced CVD and including an edge formed on the side surface of the topmost-layer interconnect lines, a silicon oxide film formed by modifying a SOG film on the HDP film between adjacent two of the topmost-layer interconnect lines in the element forming region, and a passivation film formed to cover the HDP film and the topmost-layer interconnect lines.
Claims12
A semiconductor device comprising:
- a multilayer interconnection structure overlying a substrate, said multilayer interconnection structure including a plurality of topmost-layer interconnect lines and at least one another-layer interconnect lines underlying said topmost-layer interconnect lines;
- a dielectric film formed using a high-density plasma-enhanced chemical vapor deposition (HDP-CVD) process and having an edge in contact with a sidewall of said topmost-layer interconnect lines;
- a silicon oxide film covering said dielectric film in a space between adjacent two of said interconnect lines and formed by modifying a spin-on-glass (SOG) film;
- and
- a passivation film formed on said silicon oxide film and said topmost-layer interconnect lines.
A method for manufacturing a semiconductor device comprising the steps of:
- forming a multilayer interconnection structure including a plurality of dielectric layers and a plurality of interconnect layers each including a plurality of interconnect lines;
- forming a dielectric film by using a high-density plasma-enhanced chemical vapor deposition (HDP-CVD) process, said dielectric film having an edge in contact with a sidewall of said interconnect lines of a topmost interconnect layer among said plurality of interconnect layers;
- forming a silicon oxide film on said dielectric film, said silicon oxide film having an edge in contact with said sidewall of said interconnect lines of said topmost interconnect layer;
- etching said silicon oxide film to leave a portion of said silicon oxide film in a space between adjacent two of said interconnect lines of said topmost interconnect layers;
- and
- forming a passivation film covering said etched silicon oxide film and said topmost interconnect layer.
Dependencies are inferred from the claim text.