Semiconductor device and method for forming the same
AssigneeSamsung Electronics Co., Ltd.
InventorSung-Bong KIM
Life of this patent
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Abstract
A semiconductor device includes a conductive layer formed on a semiconductor substrate. An insulation layer is formed on the conductive layer and includes an opening defined therein that exposes the conductive layer. A semiconductor pattern is formed on the insulation layer and is electrically connected to the conductive layer through the opening. A transistor is formed on the semiconductor pattern.
Claims22
A method for forming a semiconductor device, the method comprising:
- forming a conductive layer and an insulation layer on a semiconductor substrate;
- forming a first opening within the insulation layer, the first opening exposing the conductive layer;
- forming a semiconductor pattern on the insulation layer, the semiconductor pattern electrically connected to the conductive layer through the first opening;
- forming a transistor, wherein the transistor comprises the semiconductor pattern;
- and
- forming a body contact electrically connected to the conductive layer.
A method for forming a semiconductor device, the method comprising:
- forming a first transistor and an interlayer insulation layer on a single-crystal region of a semiconductor substrate;
- forming a polycrystalline conductive layer and an insulation layer on the interlayer insulation layer;
- forming a first opening through the insulation layer, the first opening exposing the polycrystalline conductive layer;
- forming a second opening through the insulation layer and the interlayer insulation layer, the second opening exposing the single-crystal active region of the semiconductor substrate;
- forming a first plug within the first opening, the first plug electrically connected to the polycrystalline conductive layer;
- forming a second plug within the second opening according to an epitaxial growth method;
- forming a single-crystal semiconductor pattern on the first and second plugs and the insulation layer;
- and
- forming a second transistor on the single-crystal semiconductor pattern.
A method of forming a semiconductor device, the method comprising:
- providing a semiconductor substrate having a single-crystal region and a first transistor formed thereon;
- forming an interlayer insulation layer on the semiconductor substrate, the interlayer insulation layer comprising a first opening defined therein exposing the single-crystal region;
- forming a single-crystal plug within the first opening;
- forming a conductive layer on the single-crystal plug and on the interlayer insulation layer;
- forming an insulation layer on the conductive layer, the insulation layer comprising a second opening exposing the conductive layer and a third opening exposing the single-crystal plug;
- forming a single-crystal semiconductor pattern within the second and third openings and on the insulation layer;
- and
- forming a second transistor on the single-crystal semiconductor pattern.
A semiconductor device, comprising:
- a conductive layer on a semiconductor substrate;
- an insulation layer on the conductive layer;
- a semiconductor pattern on the insulation layer;
- a first plug within the insulation layer electrically connecting the conductive layer to the semiconductor pattern;
- a first transistor, wherein the first transistor comprises the semiconductor pattern;
- and
- a body contact electrically connected to the conductive layer.
A silicon-on-insulator (SOI) semiconductor device, comprising:
- a semiconductor substrate;
- at least one SOI structure over the semiconductor substrate, the SOI structure comprising:
- a conductive pattern,
- an insulation layer on the conductive pattern,
- a semiconductor pattern on the insulation layer electrically connected to the conductive pattern through the insulation layer, and
- a transistor comprising the semiconductor pattern;
- and
- a body contact electrically connected to the conductive layer.
Dependencies are inferred from the claim text.