US 2007/0181877 A1 · Thin film transistor substrate and method of manufacturing the same and mask for manufacturing thin film transistor substrate

Abstract

A thin film transistor substrate, wherein the moving area of electrons between source and drain electrodes of a thin film transistor (TFT) is minimized, the moving distance of electrons is increased, and the sizes of capacitors defined by a gate electrode together with the respective source and drain electrodes are identical to each other so that an off current generated when the TFT is off can be minimized; a method of manufacturing the thin film transistor substrate; and a mask for manufacturing the thin film transistor substrate. Accordingly, it is possible to minimize an off current induced due to a phenomenon of electron trapping by light.

Claims50

Dependent claims

A thin film transistor substrate, comprising:

a plurality of gate lines;
a plurality of source lines intersecting the gate lines;
a plurality of pixel electrodes provided respectively in a plurality of pixel regions defined by the pluralities of gate and source lines;
and
a plurality of thin film transistors provided respectively in the plurality of pixel regions, each of the plurality of thin film transistors including a gate electrode connected to one of the plurality gate lines, a source electrode connected to one of the plurality of source lines, and a drain electrode connected to one of the plurality of pixel electrodes,
wherein an active layer is exposed in a channel region provided between the source and drain electrodes of each of the plurality of thin film transistors, and the active layer protrudes outside the channel region by a length corresponding to 30% or less of a width of the source line.

3 more elements

A method of manufacturing a thin film transistor substrate, comprising the steps of:

forming a gate electrode and a gate line connected thereto on a substrate;
forming a gate insulation film, an active layer and a conductive film on the substrate;
applying a photosensitive film on the conductive film and patterning the photosensitive film to form a photosensitive mask pattern that shields a source electrode formation region having first and second protruding portions and a connecting portion for connecting them, a source line formation region connected to the source electrode formation region, and a drain electrode formation region partially extending into a region between the first and second protruding portions, that shields a channel formation region provided between the drain electrode formation region partially extending into the region between the first and second protruding portions, and the first and second protruding portions and the connecting portion, and that has a thickness of the photosensitive film of the channel formation region smaller than a thickness of the source and drain electrode formation regions;
performing an etching process using the photosensitive mask pattern as an etching mask to remove the conductive film and the active layer in a region other than the source electrode formation region, the source line formation region, the drain electrode formation region and the channel formation region;
lowering a height of the photosensitive mask pattern to expose the channel formation region;
and
removing the conductive film through an etching process using the photosensitive mask pattern with the exposed channel formation region as an etching mask to form a source electrode including the first and second protruding portions and the connecting portion, a source line connected to the source electrode, a drain electrode extending between the first and second protruding portions, and a channel region with the active layer exposed between the two electrodes, wherein the active layer protrudes outside the channel region by a length corresponding to 30% or less of the width of the source line formation region.

4 more elements

A thin film transistor substrate, comprising:

a plurality of gate lines;
a plurality of source lines intersecting the plurality gate lines;
a plurality of pixel electrodes respectively provided in a plurality of pixel regions defined by the plurality of gate and source lines;
and
a plurality of thin film transistors respectively provided in the plurality of pixel regions, each of the thin film transistors including a gate electrode connected to one of the plurality of gate lines, a source electrode connected to one of plurality of the source lines, and a drain electrode connected to one of the plurality of pixel electrodes, wherein the gate electrode includes a projecting portion formed such that a portion of the gate electrode protrudes in a direction of the drain electrode, and the projecting portion partially overlaps with both edges of the drain electrode.

2 more elements

A thin film transistor substrate, comprising:

a plurality of gate lines;
a plurality of source lines intersecting the plurality of gate lines;
a plurality of pixel electrodes provided respectively in a plurality of pixel regions defined by the plurality of gate and source lines;
and
a plurality of thin film transistors respectively provided in the plurality of pixel regions, each of the plurality of thin film transistors including a gate electrode connected to one of the plurality of gate lines, a source electrode connected to one of the plurality of source lines, and a drain electrode connected to one of the plurality of pixel electrodes,
wherein the drain electrode includes a drain contact connected to one of the plurality of pixel electrodes, and a light-blocking portion is provided below the drain contact.

3 more elements

A thin film transistor substrate, comprising:

a plurality of gate lines;
a plurality of source lines intersecting the plurality gate lines;
a plurality of pixel electrodes respectively provided in a plurality of pixel regions defined by the pluralities of gate and source lines;
and
a plurality of thin film transistors respectively provided in the plurality of pixel regions, each of the thin film transistors including a gate electrode connected to one of the plurality of gate lines, a source electrode connected to one of the plurality of source lines, and a drain electrode connected to one of the plurality of pixel electrodes,
wherein the source electrode includes first and second protruding portions partially overlapping with the gate electrode, and a connecting portion connecting them, and an overlapping area of the gate electrode with the first and second protruding portions and the connecting portion is equal to an overlapping area of the gate electrode with the drain electrode.

3 more elements

Dependencies are inferred from the claim text.

Thin film transistor substrate and method of manufacturing the same and mask for manufacturing thin film transistor substrate

Life of this patent

Thin film transistor substrate and method of manufacturing the same and mask for manufacturing thin film transistor substrate

Life of this patent

Abstract

Claims50