Silicon electrode plate for plasma etching with superior durability
AssigneesSumco Corporation, Mitsubishi Materials Corporation
InventorsHideki Fujiwara, Kazuhiro Ikezawa, Hiroaki Taguchi, Naofumi Iwamoto, Toshinori Ishii, Takashi Komekyu
Life of this patent
Estimating the term…
Abstract
This silicon electrode plate for plasma etching is a silicon electrode plate for plasma etching with superior durability including silicon single crystal which, in terms of atomic ratio, contains 3 to 11 ppba of boron, and further contains a total of 0.5 to 6 ppba of either or both of phosphorus and arsenic.
Claims1
A silicon electrode plate for plasma etching with superior durability, the silicon electrode plate comprising silicon single crystal which, in terms of atomic ratio, contains 3 to 11 ppba of boron, and further contains a total of 0.5 to 6 ppba of either or both of phosphorus and arsenic.
Dependencies are inferred from the claim text.