Passivative chemical mechanical polishing composition for copper film planarization
OwnerJun Liu, Peter Wrschka +4inventors
InventorsJun Liu, Peter Wrschka, David Bernhard, MacKenzie King, Michael Darsillo, Karl Boggs
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Abstract
A CMP composition containing 5-aminotetrazole, e.g., in combination with oxidizing agent, chelating agent, abrasive and solvent. Such CMP composition advantageously is devoid of BTA, and is useful for polishing surfaces of copper elements on semiconductor substrates, without the occurrence of dishing or other adverse planarization deficiencies in the polished copper, even in the presence of substantial levels of copper ions, e.g., Cu2+, in the bulk CMP composition at the copper/CMP composition interface during CMP processing.
Claims22
1-77. (canceled)
A CMP composition having a static etch rate of copper in a range from about 200Å min−1 to about 550Å min−1 as measured in the composition further comprising CuSO4.5H2O at a concentration in a range of from about 0.3 wt. % to about 1 wt. %, based on the total weight of the composition.
A method of polishing copper on a substrate having copper thereon, including contacting copper on the substrate under CMP conditions with a CMP composition effective for polishing the copper, wherein the CMP composition has a static etch rate of copper in a range from about 200Å min−1 to about 550Å min−1 as measured in the composition further comprising CuSO4.5H2O at a concentration in a range of from about 0.3 wt. % to about 1 wt. %, based on the total weight of the composition.
Dependencies are inferred from the claim text.