Fet-based sensor for detecting reducing gases or alcohol, and associated production and operation method
OwnerMaximilian Fleischer, Gabor Kiss +2inventors
InventorsMaximilian Fleischer, Gabor Kiss, Hans Meixner, Uwe Lampe
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Abstract
An FET-based gas sensor includes at least one field-effect transistor and at least one gas-sensitive layer and a reference layer. Any changes in work function occurring when materials of the layers are exposed to a gas are used to trigger the field-effect structures. The gas-sensitive layer includes a metal oxide having an oxidation catalyst on its surface and accessible to the measured gas.
Claims20
A FET-based gas sensor, comprising at least one field-effect transistor and at least one gas-sensitive layer and a reference layer, in which the changes in work function occurring when materials of the layers are exposed to a gas are used to trigger the field-effect structures, wherein the gas-sensitive layer comprises a metal oxide having an oxidation catalyst on its surface accessible to the measured gas.
A method for fabrication of a gas sensor, comprising the steps of:
- producing a sputtered Ga2O3 thin layer with thickness of 2 μm on sputtered platinum as a backside contact;
- and
- preparing catalytically active regions by applying a Pt dispersion to the sputtered Ga2 O3 thin layer, where the step of applying a Pt dispersion is carried out by thermal decomposition of a solution of a soluble platinum complex.
(canceled)
A method for fabricating a gas sensor, comprising the steps of:
- providing a layer of a metal oxide with a predetermined thickness;
- and
- applying a catalyst in the form of particles to a first surface of the metal oxide layer.
Dependencies are inferred from the claim text.