Sputtering system providing large area sputtering and plasma-assisted reactive gas dissociation
AssigneeIndustrial Technology Research Institute
InventorsHung-Wen Wei, Hung-Che Ting, Hsueh-Ying Chen
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Abstract
This invention provides a sputtering system providing large area sputtering and plasma-assisted reactive gas dissociation. A plurality of plasma sources is provided in a reaction chamber to dissociate at least one reactive gas. The dissociated reactive gas is doped in a film during the deposition of the film so as to control the composition of the film. The property of the film is thus improved. A composite film can be formed on the substrate by the present sputtering system. The present sputtering system is suitable for film deposition on a large-area hard substrate and flexible substrate.
Claims27
A sputtering system providing large area sputtering and plasma-assisted reactive gas dissociation, comprising:
- a reaction chamber;
- a substrate holder positioned within said reaction chamber for carrying a substrate;
- a target positioned above said substrate holder in said reactive chamber, said target connected to a negative bias voltage;
- an inert gas source introduced in said reaction chamber for sputtering said target;
- a plurality of plasma sources positioned at two sides of said target above said substrate holder;
- and
- a plurality of reactive gas sources being respectively introduced in said plasma sources so as to be dissociated by said plasma sources.
A sputtering system providing large area sputtering and plasma-assisted reactive gas dissociation, comprising:
- a reaction chamber;
- a substrate holder positioned within said reaction chamber for carrying a substrate;
- at least a target positioned above said substrate holder in said reactive chamber, said target connected to a negative bias voltage;
- an inert gas source introduced in said reaction chamber for sputtering said target;
- a plurality of remote plasma sources positioned above said target and communicating with said reactive chamber;
- and
- at least a reactive gas source introduced in said plasma sources so as to be dissociated by said plasma sources.
Dependencies are inferred from the claim text.