US 2007/0181254 A1Published application

Plasma processing apparatus with resonance countermeasure function

AssigneeHitachi High-Technologies Corporation

InventorsTsutomu Iida, Ryoji Nishio, Yutaka Omoto, Masahiro Sumiya

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Abstract

A plasma processing apparatus has a processing chamber connected to an exhaust system so that the inside pressure can be reduced, a gas feeding unit for supplying gas to the processing chamber, a wafer, and a substrate electrode on which the wafer can be placed. The plasma processing apparatus also has an antenna electrode provided in opposition to the substrate electrode to generate plasma, a plasma generating high-frequency power supply connected to the antenna electrode, and a wafer biasing power supply connected to the substrate electrode. In addition, a coaxial line and a coaxial waveguide are optimized by using a coaxial model, and a voltage measuring circuit is mounted right under the coaxial line.

Claims11

Dependent claims

A plasma processing apparatus comprising:

a vacuum vessel;
a lower electrode provided within said vacuum vessel and on which a sample is placed;
an upper electrode provided to oppose said lower electrode;
a first matching device connected to said lower electrode;
a first power supply for supplying electric power to said lower electrode through said first matching device;
a second matching device connected to said upper electrode;
a second power supply for supplying electric power to said upper electrode through said second matching device;
a first detector provided within or near said first matching device to detect a voltage or phase;
and
a second detector provided within or near said second matching device to detect a voltage or phase, wherein
a transmission line provided between said first detector and said lower electrode or a transmission line provided between said second detector and said upper electrode is constructed to meet the following condition,
LC<(4πfB)−2
where L is a typical value of inductance that causes a resonance, such as the inductance of said transmission line, C is a typical value of electrostatic capacitance that causes a resonance, such as the stray capacitance of said transmission line or the stray capacitance of plasma ion sheath, and fB is the biasing high frequency to be applied to said upper electrode or said lower electrode.

10 more elements

A plasma processing apparatus comprising:

a vacuum vessel;
a lower electrode provided within said vacuum vessel and on which a sample is placed;
an upper electrode provided to oppose said lower electrode;
a first matching device connected to said lower electrode;
a first power supply for supplying electric power to said lower electrode through said first matching device;
a second matching device connected to said upper electrode;
a second power supply for supplying electric power to said upper electrode through said second matching device;
a first detector provided within or near said first matching device to detect voltage or phase;
and
a second detector provided within or near said second matching device to detect voltage or phase, wherein
a transmission line provided between said first detector and said lower electrode or a transmission line provided between said second detector and said upper electrode is a coaxial line formed of an inner conductor line and an outer conductor line surrounding said inner conductor line, and
the radius a of said inner conductor line of said transmission line, the inner diameter b of said outer conductor line and the outer diameter c of said outer conductor line are determined so that the lowest resonant frequency fL expressed by the following equation can take the maximum value,
fL
=
min
⁡
(
Reso_Line
,
Reso_sh
)
where
Reso_Line
=
1
2
⁢
⁢
π
⁢
(
Cap
+
Cs
)
×
Induct
,
⁢
Reso_sh
=
1
2
⁢
⁢
π
⁢
Ctot
×
Induct
,
Cs is the stray capacitance of said upper electrode or said lower electrode,
Cap is the electrostatic capacitance between said inner and outer conductor lines and given by the following equation,
Cap
=
2
⁢
πɛ
⁢
⁢
l
ln
⁡
(
a
b
)
,
l is the length of said transmission line,
Induct is the inductance of said transmission line, and given by the following equation,
Induct
=
l
4
⁢
π
⁡
[
μ
⁢
⁢
1
2
+
2
⁢
μ
⁢
⁢
0
⁢
⁢
ln
⁡
(
b
a
)
+
μ
⁢
⁢
2
c
2
-
b
2
⁢
(
2
⁢
c
4
c
2
-
b
2
⁢
ln
⁡
(
c
b
)
-
3
⁢
c
2
-
b
2
2
)
]
,
μ1 is the relative permeability of said inner conductor line,
μ2 is the relative permeability of said outer conductor line, and
Ctot is the resultant of the electrostatic capacitance
Cel of said upper or lower electrode and the electrostatic capacitance Csh of ion sheath, and given by the following equation,
Ctot
=
Csh
×
Cel
Csh
×
Cel

147 more elements

Dependencies are inferred from the claim text.