Back to results
US 2007/0181151 A1Published application
System and method for cleaning chemistry and processing during thin film magnetic head wafer fabrication
AssigneeHitachi Global Storage Technologies Netherlands B.V.
InventorsHung-Chin Guthrie, Ming Jiang, Nick Lara, John Yang
Life of this patent
Estimating the term…
Abstract
A solution of ammonium citrate and benzotriazole (BTA) is used to clean thin film magnetic head wafers. When used with brushing, the solution is a highly efficient process for removing particles, such as those generated during chemical-mechanical polishing (CMP), without causing corrosion and roughness. This process may be used on all CMP layers in thin film magnetic head wafer fabrication.
Claims20
A method of cleaning a thin film magnetic recording head (TFH) wafer, comprising:
- (a) providing a TFH wafer substrate formed from AlTiC;
- (b) defining a plurality of layers on the TFH wafer substrate;
- (c) polishing each of the plurality of layers;
- (d) forming a cleaning solution of ammonium citrate (AC) and benzotriazole (BTA);
- (e) cleaning each of the plurality of layers with the cleaning solution;
- and
- (f) brushing each layer with the cleaning solution present to clean each layer before an additional layer is defined thereon.
4 more elements
A method of cleaning a thin film magnetic recording head (TFH) wafer, comprising:
- (a) providing a TFH wafer substrate formed from AlTiC;
- (b) defining a plurality of layers on the TFH wafer substrate, including undercoat Al2O3 CMP (UC CMP), first shield S1 Al2O3—NiFe CMP (S1 CMP), sensor patterning hard bias CoPtCr and lead liftoff CMP (K CMP), first pole P1 Al2O3—NiFe CMP (P1 CMP), first pole extension P1P Al2O3—NiFe or CoNiFe/CoFe copper hard baked photoresist CMP (P1P CMP), second pole P2 Al2O3—NiFe or CoNiFe/CoFe CMP (P2 CMP), and overcoat Al2O3—Cu CMP (OC CMP);
- (c) chemical mechanical polishing each of the plurality of layers;
- (d) forming a cleaning solution of ammonium citrate (AC) and benzotriazole (BTA);
- (e) cleaning each of the plurality of layers with the cleaning solution including the materials NiFe, CoNiFe, CoFe, Cu, Ta, CoPtCr, SiO2, Al2O3, DLC, and hard-baked photoresist;
- and
- (f) brushing each layer with the cleaning solution present to clean each layer before an additional layer is defined thereon.
4 more elements
Dependencies are inferred from the claim text.