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US 2007/0181146 A1Published application
Plasma cvd apparatus and dry cleaning method of the same
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorMitsuhiro ICHIJO
Life of this patent
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Abstract
In a parallel flat plate type plasma CVD apparatus, plasma damage of constituent parts in a reaction chamber due to irregularity of dry cleaning in the reaction chamber is reduced and the cost is lowered. In the parallel flat plate type plasma CVD apparatus in which high frequency voltages of pulse waves having mutually inverted waveforms are applied to an upper electrode and a lower electrode, and the inversion interval of the pulse wave can be arbitrarily changed, the interior of the reaction chamber is dry cleaned.
Claims8
A method comprising:
- introducing an etching gas into a plasma CVD reaction chamber including a first electrode and a second electrode;
- generating a plasma of the etching gas by a high frequency power supply;
- and
- cleaning an inside of the plasma CVD reaction chamber by a plasma etching,
- wherein a first pulse amplitude modulated high frequency voltage is applied to the first electrode by the high frequency power supply and a second pulse amplitude modulated high frequency voltage is applied to the second electrode by the high frequency power supply, and
- wherein the second pulse amplitude modulated high frequency voltage has an opposite phase to the first pulse amplitude modulated high frequency voltage.
3 more elements
A method comprising:
- forming a film by a plasma CVD in a plasma CVD reaction chamber including a first electrode and a second electrode;
- introducing an etching gas into the plasma CVD reaction chamber;
- generating a plasma of the etching gas by a high frequency power supply;
- and
- cleaning an inside of the plasma CVD reaction chamber by a plasma etching,
- wherein a first pulse amplitude modulated high frequency voltage is applied to the first electrode by the high frequency power supply and a second pulse amplitude modulated high frequency voltage is applied to the second electrode by the high frequency power supply, and
- wherein the second pulse amplitude modulated high frequency voltage has an opposite phase to the first pulse amplitude modulated high frequency voltage.
4 more elements
A method comprising:
- introducing an etching gas into a plasma CVD reaction chamber including a first electrode and a second electrode;
- generating a plasma of the etching gas by a high frequency power supply;
- and
- cleaning an inside of the plasma CVD reaction chamber by a plasma etching,
- wherein a first pulse amplitude modulated high frequency voltage is applied to the first electrode by the high frequency power supply and a second pulse amplitude modulated high frequency voltage is applied to the second electrode by the high frequency power supply, and
- wherein the second pulse amplitude modulated high frequency voltage is phase shifted from the first pulse amplitude modulated high frequency voltage at 180°.
3 more elements
A method comprising:
- forming a film by a plasma CVD in a plasma CVD reaction chamber including a first electrode and a second electrode;
- introducing an etching gas into the plasma CVD reaction chamber;
- generating a plasma of the etching gas by a high frequency power supply;
- and
- cleaning an inside of the plasma CVD reaction chamber by a plasma etching,
- wherein a first pulse amplitude modulated high frequency voltage is applied to the first electrode by the high frequency power supply and a second pulse amplitude modulated high frequency voltage is applied to the second electrode by the high frequency power supply, and
- wherein the second pulse amplitude modulated high frequency voltage is phase shifted from the first pulse amplitude modulated high frequency voltage at 180°.
4 more elements
Dependencies are inferred from the claim text.