Method for cleaning process chamber of substrate processing apparatus, substrate processing apparatus, and method for processing substrate
AssigneeTokyo Electron Limited
InventorsShuuichi Ishizuka, Masaru Sasaki, Tetsuro Takahashi, Koji Maekawa
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Abstract
In a substrate processing apparatus configured to perform a predetermined process on a target substrate accommodated in a process chamber, the process chamber is cleaned by alternately performing an operation of generating plasma of a gas containing oxygen within the process chamber, and an operation of generating plasma of a gas containing nitrogen within the process chamber.
Claims20
A process chamber cleaning method in a substrate processing apparatus configured to perform a predetermined process on a target substrate accommodated in a process chamber, the method comprising:
- at least one cycle of alternately performing an operation of generating plasma of a gas containing oxygen within the process chamber, and an operation of generating plasma of a gas containing nitrogen within the process chamber.
A computer readable storage medium containing software used for a substrate processing apparatus configured to perform a predetermined process on a target substrate accommodated in a process chamber, wherein the software, when executed by a computer, controls the apparatus to clean the process chamber by at least one cycle of alternately performing an operation of generating plasma of a gas containing oxygen within the process chamber, and an operation of generating plasma of a gas containing nitrogen within the process chamber.
A substrate processing apparatus comprising:
- a process chamber configured to accommodate a target substrate;
- a processing mechanism configured to perform a predetermined process on the target substrate within the process chamber;
- a plasma generation mechanism configured to generate plasma within the process chamber to clean an interior of the process chamber;
- and
- a control mechanism configured to control the plasma generation mechanism,
- wherein the control mechanism controls the plasma generation mechanism to clean the process chamber by at least one cycle of alternately performing an operation of generating plasma of a gas containing oxygen within the process chamber, and an operation of generating plasma of a gas containing nitrogen within the process chamber.
A substrate processing method comprising:
- cleaning a process chamber by at least one cycle of alternately performing an operation of generating plasma of a gas containing oxygen within the process chamber, and an operation of generating plasma of a gas containing nitrogen within the process chamber;
- then, seasoning the process chamber by at least one operation of generating plasma of a gas containing oxygen or generating plasma of a gas containing nitrogen within the process chamber;
- and
- then, installing a target substrate into the process chamber and performing a predetermined process on the target substrate.
Dependencies are inferred from the claim text.