Crystals for a semiconductor radiation detector and method for making the crystals
AssigneeGeneral Electric Company
InventorsMark D'Evelyn, Dong-Sil Park, John Leman
Life of this patent
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Abstract
A method for a growing solid-state, spectrometer grade II-VI crystal using a high-pressure hydrothermal process including the following steps: positioning seed crystals in a growth zone of a reactor chamber; positioning crystal nutrient material in the nutrient zone of the chamber; filling the reactor with a solvent fluid; heating and pressuring the chamber until at least a portion of the nutrient material dissolves in the solvent and the solvent becomes supercritical in the nutrient zone; transporting supercritical from the nutrient zone to the growth zone, and growing the seed crystals as nutrients from the supercritical fluid deposit on the crystals.
Claims20
A method for a growing solid-state, spectrometer grade II-VI crystal comprising:
- positioning seed crystals in a growth zone of a reactor chamber;
- positioning crystal nutrient material in the nutrient zone of the reactor chamber;
- filling the reactor chamber with a solvent fluid;
- heating and pressurizing the chamber until at least a portion of the nutrient material dissolves in the solvent and the solvent becomes supercritical;
- transporting dissolved nutrient from the nutrient zone to the growth zone, and
- growing the seed crystals as nutrients from the supercritical fluid deposit on the crystals.
A method for a growing solid-state, spectrometer grade II-VI crystal comprising:
- positioning seed crystals in a growth zone of a reactor chamber;
- positioning crystal nutrient material in the nutrient zone of the chamber, wherein a baffle separates the nutrient zone from the reactor chamber;
- filling the reactor chamber with a solvent fluid;
- heating and pressurizing the reactor chamber until at least a portion of the nutrient material dissolves in the solvent and the solvent becomes supercritical;
- transporting dissolved nutrient from the nutrient zone, through the baffle, to the growth zone, and
- growing the seed crystals as nutrients from the supercritical fluid deposit on the seed crystals at a growth zone temperature of at least 375° C. and at a reactor pressure at least 700 bar.
Dependencies are inferred from the claim text.