Dioxaborines as organic n-semiconductors, process for the production of semiconductors utilizing dioxaborines, and semiconductor component, field effect transistor, and diode having a dioxaborine

A field effect transistor, comprising a substrate and a layer thereupon including a source electrode, a drain electrode, a gate electrode, and a dioxaborine having a formula

• wherein
• Y is a bivalent substituent having a conjugated π-electron system extending between six-membered dioxaborine heterocycles bonded thereto and including at least one member selected from the group consisting of bivalent aryl groups, bivalent heteroaryl groups, bivalent polyenes, bivalent ethynylenes, bivalent cyanines;
• X1, X2, X3, X4 is a substituent independently selected from the group consisting of a hydrogen atom, an alkyl group, a cycloalkyl group, and an aryl group;
• and
• L is a substituent independently selected from the group consisting of a fluorine atom, a monodentate ligand, and a bidentate chelate ligand bonded twice to said boron atom.