Method for sealing thin film transistors
Assignee3M Innovative Properties Company
InventorsDawn Muyres, Tommie Kelley, Michael Haase, Paul Baude, Steven Theiss
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Abstract
A method for sealing thin film transistors comprises providing a thin film transistor comprising a gate electrode, a gate dielectric, a source and a drain electrode, and an semiconductor layer; and vapor depositing a sealing material on at least a portion of the semiconductor layer through a pattern of an aperture mask.
Claims30
A method for sealing a thin film transistor comprising the steps of:
- (a) providing a thin film transistor comprising a gate electrode, a gate dielectric, a source and a drain electrode, and a semiconductor layer;
- and
- (b) vapor depositing a sealing material on at least a portion of said semiconductor layer through a pattern of an aperture mask.
A method of making a thin film transistor comprising the steps of:
- (a) providing a substrate;
- (b) depositing a gate electrode material on said substrate through a pattern of an aperture mask;
- (c) depositing a gate dielectric on said gate electrode material through a pattern of an aperture mask;
- (d) depositing a semiconductor layer adjacent to said gate dielectric through a pattern of an aperture mask;
- (e) depositing a source electrode and a drain electrode contiguous to said semiconductor layer through a pattern of an aperture mask;
- and
- (f) vapor depositing a sealing material on at least a portion of said semiconductor layer through a pattern of an aperture mask.
A transistor comprising a substrate, a gate electrode, a gate dielectric, a source and drain electrode, a semiconductor layer, and a vapor deposited sealing layer on at least a portion of said semiconductor layer.
Dependencies are inferred from the claim text.