Compositions and methods for CMP of phase change alloys

A chemical-mechanical polishing (CMP) method for polishing a phase change alloy-containing substrate, the method comprising the steps of:

• (a) contacting a surface of a phase change alloy-containing substrate with a polishing pad and an aqueous CMP composition, the CMP composition comprising an aqueous carrier, a particulate abrasive material, an optional oxidizing agent, and a chelating agent capable of chelating the phase change alloy, a component thereof, or a substance formed therefrom during chemical-mechanical polishing, wherein the particulate abrasive is present in the composition in an amount of not more than about 6 percent by weight;
• and
• (b) causing relative motion between the polishing pad and the substrate while maintaining a portion of the CMP composition in contact with the surface between the pad and the substrate for a time period sufficient to abrade at least a portion of the phase change alloy from the substrate.