Copper electrodeposition in microelectronics
AssigneeEnthone Inc.
InventorsVincent Paneccasio, Xuan Lin, Paul Figura, Richard Hurtubise, Christian Witt
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Abstract
An electrolytic plating method and composition for electrolytically plating Cu onto a semiconductor integrated circuit substrate having submicron-sized interconnect features. The composition comprises a source of Cu ions and a suppressor compound comprising polyether groups. The method involves rapid bottom-up deposition at a superfill speed by which Cu deposition in a vertical direction from the bottoms of the features to the top openings of the features is greater than Cu deposition on the side walls.
Claims28
A method for electroplating a copper deposit onto a semiconductor integrated circuit device substrate with electrical interconnect features including submicron-sized features having bottoms, sidewalls, and top openings, the method comprising:
- immersing the semiconductor integrated circuit device substrate into the electrolytic plating composition comprising an acid, a source of Cu ions in an amount sufficient to electrolytically deposit Cu onto the substrate and into the electrical interconnect features, and a suppressor compound which is a polyether chain covalently bonded to an initiating moiety comprising an ether group derived from an alcohol, the suppressor compound being bath soluble and bath compatible and having the following structure:
- wherein
- R1 is an initiating moiety derived from a substituted or unsubstituted acyclic alcohol having between 1 and about 12 carbons, a substituted or unsubstituted cyclic alcohol preferably having 5 to 7 carbons, or a polyol comprising a hydroxyl group;
- R2 is a random polyether chain comprising EO units and PO units;
- and
- R3 is selected from the group consisting of hydrogen, substituted or unsubstituted alkyl group, aryl group, aralkyl, or heteroaryl group;
- and
- supplying electrical current to the electrolytic composition to deposit Cu onto the substrate and superfill the submicron-sized features by rapid bottom-up deposition.
A method for electroplating a copper deposit onto a semiconductor integrated circuit device substrate with electrical interconnect features including submicron-sized features having bottoms, sidewalls, and top openings, the method comprising:
- immersing the semiconductor integrated circuit device substrate into the electrolytic plating composition comprising an acid, a source of Cu ions in an amount sufficient to electrolytically deposit Cu onto the substrate and into the electrical interconnect features, and a suppressor compound which is a PO/EO random copolymer being bath soluble and bath compatible and having the structure:
- wherein n is between 1 and about 550, m is between 1 and about 125, and the suppressor compound has a molecular weight of at least about 2800 g/mole;
- and
- supplying electrical current to the electrolytic composition to deposit Cu onto the substrate and superfill the submicron-sized features by rapid bottom-up deposition.
An electrolytic plating composition for electrolytically plating a copper deposit onto a semiconductor integrated circuit device substrate with electrical interconnect features including submicron-sized features having bottoms, sidewalls, and top openings, the composition comprising:
- an acid;
- a source of Cu ions in an amount sufficient to electrolytically deposit Cu onto the substrate and into the electrical interconnect features;
- and
- a suppressor compound which is a PO/EO random copolymer being bath soluble and bath compatible, the suppressor compound having a structure selected from between (a) and (b):
- wherein
- R1 is an initiating moiety derived from a substituted or unsubstituted acyclic alcohol having between 1 and about 12 carbons, a substituted or unsubstituted cyclic alcohol preferably having 5 to 7 carbons, or a polyol comprising a hydroxyl group;
- R2 is a random polyether chain comprising EO units and PO units;
- and
- R3 is selected from the group consisting of hydrogen, substituted or unsubstituted alkyl group, aryl group, aralkyl, or heteroaryl group;
- and
- wherein
- n is between 1 and about 550;
- m is between 1 and about 125;
- and
- the suppressor compound has a molecular weight of at least about 2800 g/mole.
Dependencies are inferred from the claim text.