Pass through via technology for use during the manufacture of a semiconductor device
AssigneeMicron Technology, Inc.
InventorWilliam Hiatt
Life of this patent
Estimating the term…
Abstract
A method for forming vias which pass through a semiconductor wafer substrate assembly such as a semiconductor die or wafer allows two different types of connections to be formed during a single formation process. One connection passes through the wafer without being electrically coupled to the wafer, while the other connection electrically connects to a conductive pad. To connect to a pad, a larger opening is etched into an overlying dielectric layer, while to pass through a pad without connection, a narrower opening is etched into the overlying dielectric layer. An inventive structure resulting from the method is also described.
Claims5
A method for forming a semiconductor device, comprising:
- forming a first opening through a first conductive pad and a second opening through a second conductive pad, wherein the first and second openings have about the same width;
- forming a dielectric material over the first and second conductive pads and within the first and second openings;
- forming a mask comprising:
- a first opening having a width about the same as the opening in the first conductive pad and which overlies the opening in the first conductive pad;
- and
- a second opening having a width which is larger than the opening in the second conductive pad and which overlies the opening in the second conductive pad;
- etching a semiconductor wafer through the first and second openings in the mask and through the openings in the first and second conductive pads to form first and second openings in the semiconductor wafer;
- and
- forming a conductive material within the first and second openings in the semiconductor wafer, within the first opening through the first conductive pad, and within the second opening through the second conductive pad such that the conductive material is electrically coupled with the second conductive pad and is electrically isolated from the first conductive pad.
A method for forming a semiconductor device, comprising:
- forming a first dielectric material over a semiconductor wafer substrate assembly comprising first and second conductive pads, wherein the first and second conductive pads each comprise a perimeter;
- etching a first opening having a first width in the first dielectric material within the perimeter of the first conductive pad while simultaneously etching a second opening having a second width wider than the first width in the first dielectric material to expose the second conductive pad;
- forming an etch mask over the first and second conductive pads and within the first and second openings in the first dielectric material, wherein the etch mask comprises:
- a first opening having a third width about equal to the first width within the perimeter of the first conductive pad;
- and
- a second opening having a fourth width which is less than the second width within the perimeter of the second conductive pad;
- and
- forming a first opening in the semiconductor wafer substrate assembly by etching the semiconductor wafer substrate assembly through the first opening in the first dielectric material and through an opening in the first conductive pad, while simultaneously forming a second opening in the semiconductor wafer substrate assembly by etching the semiconductor wafer substrate assembly through the second opening in the first dielectric material and through an opening in the second conductive pad.
Dependencies are inferred from the claim text.