Method of manufacturing semiconductor device and display device

A method of manufacturing a semiconductor device comprising of:

• forming a semiconductor layer over a substrate;
• forming an insulating film over the semiconductor layer;
• forming an opening in the insulating film over the semiconductor layer;
• dropping a liquid droplet, containing a conductive composition, by a droplet discharging method over the substrate, wherein a wiring is then formed at a location over the substrate including at least in the opening;
• and
• performing a heat treatment, wherein the wiring extends to a bottom portion of the opening and the wiring is electrically connected to the semiconductor layer.

A method of manufacturing a semiconductor device comprising of:

• forming a gate electrode over a substrate;
• forming a gate insulating film over the substrate;
• forming a semiconductor layer having an amorphous structure over the gate electrode;
• forming a semiconductor layer doped with an n-type or p-type conductivity over the semiconductor layer having the amorphous structure;
• forming source and drain electrodes over the semiconductor layer doped with the n-type or p-type conductivity;
• forming an insulating film over the source and drain electrodes;
• forming an opening in the insulating film over the source and drain electrodes;
• dropping a liquid droplet, containing a conductive composition, by a droplet discharging method over the substrate, wherein a wiring is then formed at a location over the substrate including at least in the opening;
• and
• performing a heat treatment, wherein the wiring extends to a bottom portion of the opening and the wiring is electrically connected to the semiconductor layer.

A method of manufacturing a semiconductor device comprising of:

• forming a semiconductor layer over a substrate;
• forming an insulating film over the semiconductor layer;
• forming an opening in the insulating film over the semiconductor layer;
• dropping a liquid droplet, containing a conductive composition, by a droplet discharging method over the substrate, wherein a wiring is then formed at a location over the substrate including at least in the opening;
• performing a heat treatment, wherein the wiring extends to a bottom portion of the opening and the wiring is electrically connected to the semiconductor layer;
• forming a pixel electrode by a droplet discharging method over the substrate;
• and
• forming a light emitting layer over the pixel electrode.