Interconnect substrate, semiconductor device, and method of manufacturing the same

A method of manufacturing an interconnect substrate, comprising:

• forming a first layer constructed with a non-photosensitive insulating material on a supporting substrate;
• forming a first electrode pad on said first layer;
• forming an interconnect and an insulating layer covering said interconnect on said first electrode pad;
• forming a second electrode pad on said insulating layer;
• forming a second layer constructed with a photosensitive insulating material so as to cover said second electrode pad;
• forming a second opening in said second layer so that said second electrode pad is exposed;
• removing said supporting substrate after forming said second opening;
• and
• forming a first opening in said first layer after removing said supporting substrate so that said first electrode pad is exposed, said first opening having an opening area smaller than that of said second opening.

A method of manufacturing a semiconductor device, comprising:

• forming a first layer constructed with a non-photosensitive insulating material on a supporting substrate;
• forming a first electrode pad on said first layer;
• forming an interconnect and an insulating layer covering said interconnect on said first electrode pad;
• forming a second electrode pad on said insulating layer;
• forming a second layer constructed with a photosensitive insulating material so as to cover said second electrode pad;
• forming a second opening in said second layer so that said second electrode pad is exposed;
• removing said supporting substrate after forming said second opening;
• forming a first opening in said first layer after removing said supporting substrate so that said first electrode pad is exposed, said first opening having an opening area smaller than that of said second opening;
• and
• connecting a semiconductor chip to said first electrode pad that is exposed to said first opening.