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US 2007/0178685 A1Published application
Method of increasing the etch selectivity in a contact structure of semiconductor devices
AssigneeAdvanced Micro Devices, Inc.
InventorsCarsten Peters, Heike Salz, Ralf Richter, Matthias Schaller
Life of this patent
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Abstract
By providing an additional silicon dioxide based etch stop layer, a corresponding etch process for forming contact openings for directly connecting polysilicon lines and active areas may be controlled in a highly reliable manner. In another aspect, the etch selectivity of the contact structure may be increased by a modification of the etch behavior of the exposed portion of the contact etch stop layer.
Claims10
A method, comprising:
- forming an etch stop layer comprising silicon dioxide above a circuit element comprising a conductive line and an active semiconductor region;
- forming a contact etch stop layer on said etch stop layer;
- forming an interlayer dielectric material above said circuit element and said contact etch stop layer;
- forming a contact opening in said interlayer dielectric material by an etch process using said contact etch stop layer as an etch stop, said contact opening connecting said conductive line and said active semiconductor region;
- removing said contact etch stop in said contact opening using said etch stop layer as an etch stop;
- removing said etch stop layer within said contact opening;
- and
- filling said contact opening with a conductive material.
5 more elements
A method, comprising:
- forming a contact etch stop layer above a circuit element comprising a conductive line and an active semiconductor region;
- forming an interlayer dielectric material above said circuit element and said contact etch stop layer;
- forming a contact opening in said interlayer dielectric material by an etch process using said contact etch stop layer as an etch stop, said contact opening connecting said conductive line and said active semiconductor region;
- modifying an etch rate of a portion of said contact etch stop layer exposed in said contact opening;
- removing said exposed portion of the contact etch stop in said contact opening;
- and
- filling said contact opening with a conductive material.
4 more elements
Dependencies are inferred from the claim text.