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US 2007/0178683 A1Published application
Semiconductive device fabricated using a two step approach to silicide a gate and source/drains
AssigneeTexas Instruments Incorporated
InventorsManfred Ramin, Mike Pas
Life of this patent
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Abstract
In one aspect, the invention provides a method of fabricating a semiconductive device [200], comprising siliciding a gate [340] with a first silicidation layer [710], removing a protective layer [510] to expose source/drains [415], and siliciding the gate [340] and the source/drains [415] with a second silicidation layer.
Claims19
A method of fabricating a semiconductive device, comprising:
- siliciding a gate with a first silicidation layer;
- removing a protective layer to expose source/drains;
- and
- siliciding the gate and the source/drains with a second silicidation layer.
1 more element
A method of manufacturing a semiconductive device, comprising:
- forming gates over a semiconductive substrate;
- forming source/drains adjacent the gates;
- siliciding the gates and the source/drains, comprising:
- siliciding the gates with a first silicidation layer;
- removing a protective layer to expose the source/drains;
- and
- siliciding the gate and the source/drains with a second silicidation layer;
- forming dielectric layers over the gates;
- and
- forming interconnects in the dielectric layers to interconnect the gates and form an operative integrated circuit.
7 more elements
Dependencies are inferred from the claim text.