Methods of implanting ions and ion sources used for same
AssigneeVarian Semiconductor Equipment Associates, Inc.
InventorsChristopher Hatem, Anthony Renau, James E. White
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Abstract
A method of implanting ions comprising generating C2B10Hx, ions from C2B10H12 and implanting the C2B10Hx, ions in a material. In some embodiments, the molecular weight of the C2B10Hx, ions is greater than 100 amu. In other embodiments, the molecular weight of the C2B10Hx, ions is approximately 132 to 144 amu or approximately 136 to 138 amu. An ion source is also disclosed comprising a chamber housing defining a chamber and a source feed gas supply configured to introduce C2B10H12 into the chamber, wherein the ion source is configured to ionize the source feed gas within the chamber into C2B10Hxions.
Claims15
A method of implanting ions comprising:
- generating C2B10Hx ions from C2B10H12;
- and
- implanting the C2B10Hx, ions in a material.
An ion source comprising:
- a chamber housing defining a chamber;
- and
- a source feed gas supply configured to introduce C2B10H12 into the chamber, wherein the ion source is configured to ionize the source feed gas within the chamber into C2B10Hx, ions.
Dependencies are inferred from the claim text.