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US 2007/0178676 A1Published application
Method of forming semiconductor multi-layered structure
AssigneeHitachi, Ltd.
InventorKatsuya Oda
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Abstract
Disclosed herein is a method of forming a single crystal SiC on a Si Substrate wherein a SiGe layer lower in melting point than Si and SiC and an amorphous SiC are formed on the Si layer and this structure is annealed at a temperature higher than the melting point of SiGe to relieve strain between SiC and the Si substrate and to cause an amorphous SiC to crystallize at the same time, thereby forming the single crystal SiC layer good in crystallinity and surface morphology.
Claims17
A method of forming semiconductor multi-layered structure comprising the steps of:
- forming a first semiconductor thin film on a single crystal substrate, the first semiconductor thin film being lower in melting point than the single crystal substrate and being a single crystal;
- forming a second semiconductor thin film on the first semiconductor thin film, the second semiconductor thin film including a semiconductor material different in lattice constant from the single crystal substrate and higher in melting point than the first semiconductor thin film;
- and
- annealing the second semiconductor thin film at a temperature higher than the melting point of the first semiconductor thin film to turn the second semiconductor thin film into a single crystal.
1 more element
Dependencies are inferred from the claim text.