Sintered semiconductor material
AssigneesCentre National De La Recherche Scientifique, Universite De Poitiers
InventorAlain Straboni
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Abstract
The invention relates to a method for forming a semiconductor material obtained by sintering powders and to a semiconductor material. The method comprises a compression and heat treatment stage such that one part of the powder is melted or becomes viscous. The material can be used in the photovoltaic field.
Claims10
A method for forming a semiconductor material from powders comprising at least one component belonging to the group formed by the elements of column IV of the Mendeleiev table and their alloys, said method comprising a step of compression of said powders and a thermal processing step such that part at least of the powders is melted or made viscous.
A semiconductor material obtained at least partially by compression and thermal processing of powders comprising at least two distinct areas formed of distinct components belonging to the group formed by the elements of column IV of the Mendeleiev table and the alloys thereof.
A structure or a component formed of one or comprising at least one semiconductor material comprising grains and/or aggregates exhibiting energy gaps of different value.
Dependencies are inferred from the claim text.