Laser irradiation method, laser irradiation apparatus and method for manufacturing semiconductor device

A method of manufacturing a semiconductor device comprising the steps of:

• forming an impurity region in a semiconductor;
• emitting a laser beam which is a fundamental wave from a laser oscillator;
• delivering the laser beam onto the semiconductor;
• and
• activating the impurity region by irradiating with the laser beam which generates multiphoton absorption while moving the surface of the semiconductor relatively to the laser beam.

A method of manufacturing a semiconductor device comprising the steps of:

• emitting a laser beam which is a fundamental wave from a laser oscillator;
• delivering the laser beam onto a semiconductor;
• and
• crystallizing the semiconductor by irradiating with the laser beam which generates multiphoton absorption while moving the surface of the semiconductor relatively to the laser beam,
• wherein the laser beam has a peak out power ranging from 1 GW/cm2 to 1 TW/cm2.

A method of manufacturing a semiconductor device comprising the steps of:

• forming an impurity region in a semiconductor;
• emitting a laser beam which is a fundamental wave from a laser oscillator;
• delivering the laser beam onto the semiconductor;
• and
• activating the impurity region by irradiating with the laser beam which generates multiphoton absorption while moving the surface of the semiconductor relatively to the laser beam,
• wherein the laser beam has a peak out power ranging from 1 GW/cm2 to 1 TW/cm2.

A method of manufacturing a semiconductor device comprising the steps of:

• forming a semiconductor layer over a substrate;
• forming an insulating layer adjacent to the semiconductor layer;
• forming a conductive layer adjacent to the insulating layer;
• emitting a laser beam which is a fundamental wave from a laser oscillator;
• delivering the laser beam onto the semiconductor layer;
• and
• crystallizing the semiconductor layer by irradiating with the laser beam which generates multiphoton absorption while moving the surface of the semiconductor layer relatively to the laser beam.

A laser irradiation apparatus comprising:

• a solid state laser oscillator for emitting a laser beam which is a fundamental wave;
• a mechanism for projecting and delivering the laser beam which is the fundamental wave onto an irradiation surface, said mechanism including a condenser lens;
• and
• means for moving the irradiation surface relatively to the laser beam which is the fundamental wave,
• wherein the condenser lens forms the laser beam which is the fundamental wave into one of a linear shape and an elliptical shape.