GaN bulk growth by Ga vapor transport
AssigneeCornell Research Foundation, Inc.
InventorsMichael Spencer, Phani Konkapaka, Huaqiang Wu, Yuri Makarov
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Abstract
GaN is grown by creating a Ga vapor from a powder, and using an inert purge gas from a source to transport the vapor to a growth site where the GaN growth takes place. In one embodiment, the inert gas is N2, and the powder source is GaN powder that is loaded into source chambers. The GaN powder is congruently evaporated into Ga and N2 vapors at temperatures between approximately 1000 and 1200° C. The formation of Ga liquid in the powder is suppressed by the purging of an inert gas through the powder. The poser may also be isolated from a nitride containing gas provided at the growth cite. In one embodiment, the inert gas is flowed through the powder.
Claims32
A method of growing GaN, the method comprising:
- generating a Ga vapor from a GaN containing powder;
- transporting the Ga vapor to a growth site;
- providing nitride containing gas to the growth site to facilitate growth of GaN with a desired crystalline structure;
- and
- isolating the GaN powder from the nitride containing gas.
A method of growing GaN, the method comprising:
- generating a Ga vapor from a Ga containing powder;
- transporting the Ga vapor to a growth site;
- providing a nitride containing gas to the growth site to facilitate growth of GaN with a desired crystalline structure;
- and
- purging the GaN powder to prevent liquification of the powder.
A device for growing bulk crystals, the device comprising:
- a container for holding a source powder to be vaporized;
- a purging inlet located proximate the container for providing a purging gas to purge the powder;
- a growth site located a distance from the container;
- and
- a growth inlet located proximate the growth site for providing an inlet growth gas to be combined with the vapor from the container to form the bulk crystals on the growth site.
A device for growing GaN, the device comprising:
- means for generating a Ga vapor from a Ga containing powder;
- means for transporting the Ga vapor to a growth site;
- means for providing a nitride containing gas to the growth site to facilitate growth of GaN with a desired crystalline structure;
- and
- means for purging the GaN powder.
A method of growing GaN, the method comprising:
- generating a Ga vapor from a Ga containing powder by flowing a carrier gas through the Ga containing powder;
- transporting the Ga vapor to a growth site;
- and
- providing a nitride containing gas proximate the growth site.
A device for growing GaN, the device comprising:
- a first inlet for an inert gas;
- means for holding a source powder containing Ga and oxygen downstream from the first inlet;
- a second inlet downstream from the means for holding the source powder for providing a nitride containing gas;
- and
- a holder downstream from the second inlet for holding a seed for facilitating growth of crystalline GaN.
Dependencies are inferred from the claim text.