Systems And Methods For Forming Integrated Circuit Components Having Precise Characteristics

A method of forming integrated circuit components, comprising:

• providing a photomask including a first mask feature having a first mask feature geometry corresponding to a first type of integrated circuit (IC) component and a second mask feature having a second mask feature geometry corresponding to a second type of IC component;
• performing a first lithography process to transfer the first and second mask feature geometries to a first semiconductor wafer region to form a first IC component and a second IC component in the first semiconductor wafer region;
• measuring at least one electrical characteristic of the first IC component in the first semiconductor wafer region;
• measuring at least one electrical characteristic of the second IC component in the first semiconductor wafer region;
• comparing the at least one measured electrical characteristic of the first IC component with the at least one measured electrical characteristic of the second IC component;
• and
• based on the comparison of the measured electrical characteristics, determining whether to physically modify at least one of the first mask feature geometry and the second mask feature geometry.

A method of forming integrated circuit components, comprising:

• providing a first photomask including a first mask feature having a first mask feature geometry corresponding to a first type of integrated circuit (IC) component;
• providing a second photomask including one or more second mask features each having a second mask feature geometry corresponding to a second type of IC component;
• performing a first lithography process using the first photomask to transfer the first mask feature geometry to a first semiconductor wafer region to form the first IC component in the first semiconductor wafer region;
• performing a second lithography process using the second photomask to transfer the second mask feature geometry to the first semiconductor wafer region to form one or more second IC components in the first semiconductor wafer region, each of the one or more second IC components being coupled to the first IC component;
• measuring at least one electrical characteristic of the first IC component;
• and
• based at least on the results of measuring the at least one electrical characteristic of the first IC component, physically modifying the second mask feature geometry of at least one of the one or more second mask features.

An integrated circuit device comprising a particular integrated circuit component formed in a particular semiconductor wafer region, the particular integrated circuit component formed at least by:

• providing a photomask including a first mask feature having a first mask feature geometry corresponding to a first type of integrated circuit (IC) component;
• performing a first lithography process to transfer the first mask feature geometry to a test semiconductor wafer region to form a test IC component in the test semiconductor wafer region;
• measuring at least one electrical characteristic of the test IC component;
• and
• based at least on the results of measuring the at least one electrical characteristic of the test IC component, physically modifying the first mask feature;
• and
• performing a second lithography process to transfer the modified first mask feature geometry to the particular semiconductor wafer region to form the particular IC component in the second semiconductor wafer region.