Process monitor mark and the method for using the same
AssigneeMacronix International Co., Ltd.
InventorChin-Cheng Yang
Life of this patent
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Abstract
The invention is directed to a mark pattern for forming a process monitor mark in a patterned underlayer to monitor a patterning result of a photoresist layer over the patterned underlayer around the boundary between a peripheral region and a device region of a die, wherein the patterned underlayer is formed by using a first mask having a first pattern in a main region of the first mask and the mark pattern at an unused region of the first mask and the first pattern possesses a first mask critical dimension. The mark pattern comprising: a second pattern and a frame pattern. The second pattern has a second mask critical dimension, wherein the second mask critical dimension is as same as the first mask critical dimension. The frame pattern encloses the second pattern.
Claims30
A mark pattern for forming a process monitor mark in a patterned underlayer to monitor a patterning result of a photoresist layer over the patterned underlayer, wherein the patterned underlayer is formed by using a first mask having a first pattern in a main region of the first mask and the mark pattern at an unused region of the first mask and the first pattern possesses a first mask critical dimension, the mark pattern comprising:
- a second pattern with a second mask critical dimension, wherein the second mask critical dimension is as same as the first mask critical dimension;
- and
- a frame pattern enclosing the second pattern.
A process monitor mark for monitoring a patterning result of a photoresist layer over a patterned underlayer around the boundary between a peripheral region and a device region of a die, wherein the process monitor mark and a first pattern having a first critical dimension are simultaneously formed in the patterned underlayer at an unused region and the device region of the die respectively, the process monitor mark comprising:
- a first mark with a second critical dimension, wherein the second critical dimension is as same as the first critical dimension;
- and
- a frame mark enclosing the second pattern.
A method for patterning a material layer over a wafer, wherein the material layer is formed on a patterned underlayer, the patterned underlayer possesses a first pattern and a process monitor mark at a device region and an unused region of the wafer respectively and the process monitor mark comprises a first mark and a frame mark enclosing the first mark, the method comprising:
- forming a first photoresist layer having a second pattern and a second mark on the material layer, wherein the second pattern is at the device region and the second mark covers the first mark located at the unused region;
- measuring a distance between a margin of the second mark and the frame mark;
- removing the first photoresist layer when the distance is not within a tolerance range;
- and
- patterning the material layer by using the first photoresist layer when the distance is within the tolerance range.
A method for monitoring a patterning process of a photoresist layer over a patterned underlayer around the boundary between a peripheral region and a device region of a die, wherein the patterned underlayer has a first pattern and a first mark in the device region and an unused region of the die respectively, the method comprising:
- forming a photoresist layer over the underlayer;
- exposing the photoresist to form a second pattern and a second mark at the device region and the unused region in the photoresist layer respectively;
- developing the photoresist;
- measuring a distance between a margin of the second mark and the frame mark;
- and
- removing the first photoresist layer when the distance is not within a tolerance range.
Dependencies are inferred from the claim text.