Structure and method to form source and drain regions over doped depletion regions

A semiconductor device comprising:

• a substrate having a surface;
• said substrate being doped with a first conductivity type impurity;
• a gate structure over the surface of said substrate;
• a channel region directly beneath said gate structure;
• a source region and a drain region in said substrate separated by said channel region, said source region and said drain region each being doped with a second conductivity type impurity;
• and
• first and second doped depletion regions doped with a second conductivity type impurity in said substrate;
• said first doped depletion region is directly under said source region and said second doped depletion region is directly under said drain region.

A device comprising:

• a gate structure over a substrate, the substrate being doped with a first conductivity type impurity;
• source and drain regions within the substrate and proximate to the gate structure, the source and drain regions being doped with a second conductivity type impurity;
• first and second doped depletion regions within the substrate, the first and second doped depletion regions being doped with the second conductivity type impurity,
• at least a portion of the first doped depletion region is beneath, and separated from, the source region, and at least a portion of the second doped depletion region is beneath, and separated from, the drain region;
• and
• a channel region within the substrate under the gate structure;
• wherein the first and second doped depletion regions are not directly beneath the channel region.