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AssigneeSystem General Corp.
InventorsChih-Feng Huang, Ta-yung Yang, Jenn-yu Lin, Tuo-Hsin Chien
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A method of manufacturing different-voltage devices mainly comprises forming at least one high-voltage well in high-voltage device regions, at least one N-well in low-voltage device regions, at least one P-well in low-voltage device regions, source/drain wells in high-voltage device regions, and isolation wells in isolation regions in a p-type substrate. The breakdown voltage is adjusted by modulating the ion doping profile. Furthermore, parameters of implanting conductive ions are adjusted for implanting conductive ions into both high-voltage device regions and low-voltage device regions. The isolation wells formed in isolation regions between devices are for separating device formed over high-voltage device regions and device formed over low-voltage device regions. The thickness of a HV gate oxide layer is thicker than the thickness of an LV gate oxide layer for modulating threshold voltages of high-voltage devices and low-voltage devices.
A process of manufacturing different-voltage devices, which is compatible with a CMOS process, comprising:
A different-voltage device, which is manufactured by a process compatible with a CMOS process, the different-voltage device comprising:
A high-voltage device used in a different-voltage device which is manufactured by a process compatible with a CMOS process, wherein a high-voltage device is manufactured with a process of a low-voltage device, and a plurality of additional masks are further added to manufacture the high-voltage device, and a low-voltage gate oxide layer is disposed directly on a high-voltage gate oxide layer in the high voltage device wherein the depth of a high-voltage well of the high-voltage device is deeper than the depth of a low-voltage well of the low-voltage device.
Dependencies are inferred from the claim text.