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US 2007/0178631 A1Published application
Crystallization method for semiconductor film, manufacturing method for semiconductor device, and laser irradiation apparatus
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorKoichiro Tanaka
Life of this patent
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Abstract
A semiconductor film formed over a substrate is irradiated by a first laser beam which is incident on a bottom surface of the substrate at an angle and by a second laser beam which is incident on the bottom surface of the substrate at an angle opposite that of the first laser beam and oscillated by an oscillator differing from that of the first laser beam; whereby, part of the semiconductor film is melted, and a portion of the semiconductor film being melted is moved while the positions of irradiation of the first and the second laser beams and are being scanned approximately along the direction of slant for the first laser beam or the second laser beam.
Claims37
A method for crystallizing a semiconductor film, comprising the steps of:
- oscillating a first laser beam by a first oscillator;
- oscillating a second laser beam by a second oscillator;
- processing the first laser beam and the second laser beam so as to have a linear cross section;
- irradiating the semiconductor film with the first laser beam and the second laser beam concurrently;
- moving an irradiated portion of the semiconductor film along a direction substantially perpendicular to a longitudinal axis of the first laser beam,
- wherein the first laser beam is incident on the semiconductor film at a first angle with respect to a plane, the plane including the longitudinal axis of the first laser beam and being perpendicular to the semiconductor film, and
- wherein the second laser beam is incident on the semiconductor film at a second angle opposite the angle of the first laser beam with respect to the plane.
4 more elements
A method for crystallizing a semiconductor film, comprising the steps of:
- oscillating a laser beam by an oscillator;
- splitting the laser beam into a first laser beam and a second laser beam;
- processing the first laser beam and the second laser beam so as to have a linear cross section;
- irradiating the semiconductor film with the first laser beam and the second laser beam concurrently;
- moving an irradiated portion of the semiconductor film along a direction substantially perpendicular to a longitudinal axis of the first laser beam,
- wherein the first laser beam is incident on the semiconductor film at a first angle with respect to a plane, the plane including the longitudinal axis of the first laser beam and being perpendicular to the semiconductor film,
- wherein the second laser beam is incident on the semiconductor film at a second angle opposite the angle of the first laser beam with respect to the plane,
- wherein an optical path length of the first laser beam is different from an optical path length of the second laser beam.
5 more elements
A method for crystallizing a semiconductor film, comprising the steps of:
- oscillating a laser beam by an oscillator;
- splitting the laser beam into a first laser beam and a second laser beam;
- processing the first laser beam and the second laser beam so as to have a linear cross section;
- irradiating the semiconductor film with the first laser beam and the second laser beam concurrently;
- moving an irradiated portion of the semiconductor film along a direction substantially perpendicular to a longitudinal axis of the first laser beam,
- wherein the first laser beam is incident on the semiconductor film at a first angle with respect to a plane, the plane including the longitudinal axis of the first laser beam and being perpendicular to the semiconductor film,
- wherein the second laser beam is incident on the semiconductor film at a second angle opposite the angle of the first laser beam with respect to the plane.
4 more elements
A method for manufacturing a semiconductor device, comprising the steps of:
- forming a semiconductor film over a substrate;
- oscillating a first laser beam by a first oscillator;
- oscillating a second laser beam by a second oscillator;
- processing the first laser beam and the second laser beam so as to have a linear cross section;
- irradiating the semiconductor film with the first laser beam and the second laser beam concurrently;
- moving an irradiated portion of the semiconductor film along a direction substantially perpendicular to a longitudinal axis of the first laser beam,
- wherein the first laser beam is incident on the semiconductor film at a first angle with respect to a plane, the plane including the longitudinal axis of the first laser beam and being perpendicular to the semiconductor film, and
- wherein the second laser beam is incident on the semiconductor film at a second angle opposite the angle of the first laser beam with respect to the plane.
5 more elements
A method for manufacturing a semiconductor device, comprising the steps of:
- oscillating a laser beam by an oscillator;
- splitting the laser beam into a first laser beam and a second laser beam;
- processing the first laser beam and the second laser beam so as to have a linear cross section;
- irradiating the semiconductor film with the first laser beam and the second laser beam concurrently;
- moving an irradiated portion of the semiconductor film along a direction substantially perpendicular to a longitudinal axis of the first laser beam,
- wherein the first laser beam is incident on the semiconductor film at a first angle with respect to a plane, the plane including the longitudinal axis of the first laser beam and being perpendicular to the semiconductor film,
- wherein the second laser beam is incident on the semiconductor film at a second angle opposite the angle of the first laser beam with respect to the plane,
- wherein an optical path length of the first laser beam is different from an optical path length of the second laser beam.
5 more elements
A method for manufacturing a semiconductor device, comprising the steps of:
- oscillating a laser beam by an oscillator;
- splitting the laser beam into a first laser beam and a second laser beam;
- processing the first laser beam and the second laser beam so as to have a linear cross section;
- irradiating the semiconductor film by the first laser beam and the second laser beam concurrently;
- moving an irradiated portion of the semiconductor film along a direction substantially perpendicular to a longitudinal axis of the first laser beam,
- wherein the first laser beam is incident on the semiconductor film at a first angle with respect to a plane, the plane including the longitudinal axis of the first laser beam and being perpendicular to the semiconductor film,
- wherein the second laser beam is incident on the semiconductor film at a second angle opposite the angle of the first laser beam with respect to the plane.
4 more elements
A laser irradiation apparatus comprising:
- a first oscillator for oscillating a first laser beam;
- a second oscillator for oscillating a second laser beam;
- an optical system for processing the first laser beam and the second laser beam into linear laser beams and irradiating a semiconductor film with the first laser beam and the second laser beam concurrently, wherein the first laser beam is incident on the semiconductor film at a first angle with respect to a plane, the plane including the longitudinal axis of the first laser beam and being perpendicular to the semiconductor film, and wherein the second laser beam is incident on the semiconductor film at a second angle opposite the first angle with respect to the plane;
- and
- a movement mechanism for moving a relative position of the semiconductor film and the optical system along a direction substantially perpendicular to a longitudinal axis of the first laser beam.
2 more elements
A laser irradiation apparatus comprising:
- an oscillator for oscillating a laser beam;
- a beam splitter for splitting the laser beam into a first laser beam and a second laser beam;
- at least a mirror for reflecting a second laser beam;
- an optical system for processing the first laser beam and the second laser beam into linear laser beams and irradiating a semiconductor film with the first laser beam and the second laser beam concurrently, wherein the first laser beam is incident on the semiconductor film at a first angle with respect to a plane, the plane including the longitudinal axis of the first laser beam and being perpendicular to the semiconductor film, and wherein the second laser beam is incident on the semiconductor film at a second angle opposite the first angle with respect to the plane;
- and
- a movement mechanism for moving an irradiated portion of the semiconductor film from the first laser beam side to the second laser beam side along a direction substantially perpendicular to a longitudinal axis of the first laser beam,
- wherein the light pass lengths of the first laser beam and the second laser beam from the oscillator to the optical system are different.
4 more elements
A laser irradiation apparatus comprising:
- an oscillator for oscillating a laser beam;
- a beam splitter for splitting the laser beam into a first laser beam and a second laser beam;
- an optical system for processing the first laser beam and the second laser beam into linear laser beams and irradiating a semiconductor film with the first laser beam and the second laser beam concurrently, wherein the first laser beam is incident on the semiconductor film at a first angle with respect to a plane, the plane including the longitudinal axis of the first laser beam and being perpendicular to the semiconductor film, and wherein the second laser beam is incident on the semiconductor film at a second angle opposite the first angle with respect to the plane;
- and
- a movement mechanism for moving an irradiated portion of the semiconductor film along a direction substantially perpendicular to a longitudinal axis of the first laser beam.
2 more elements
Dependencies are inferred from the claim text.