Method of Forming Copper Indium Gallium Containing Precursors And Semiconductor Compound Layers
OwnerBulent Basolinventor
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Abstract
The present invention relates to methods of preparing polycrystalline thin films of semiconductors for radiation detectors and solar cells and the films resulting therefrom. In one aspect, the present invention provides a first type of particles and a second type of particles, wherein the first type of particles have a Cu/(In+Ga) molar ratio of at least 1.38. In another aspect the present invention provides a first type of particles containing a Cu-Group IIIA alloy wherein a molar ratio of Cu to Group IIIA material within each of the particles is at least 1.38.
Claims37
A method of forming a Cu(In,Ga)(Se,S)2 compound layer on a substrate comprising,
- preparing a powder, and
- depositing the powder onto the substrate in the form of a precursor film
- wherein the powder comprises a first type of particles and a second type of particles, and
- wherein the first type of particles each comprises only Cu and at least one of In and Ga, and each particle has a Cu/(In+Ga) molar ratio of at least 1.38.
A precursor film deposited on a base comprising a first type of particles containing a Cu-Group IIIA alloy wherein a molar ratio of Cu to Group IIIA material within each of the particles is at least 1.38.
Dependencies are inferred from the claim text.