Fine particle-containing body, fine-particle-containing body manufacturing method, storage element, semiconductor device and electronic equipment
AssigneeSharp Kabushiki Kaisha
InventorsNobutoshi Arai, Hiroshi Iwata
Life of this patent
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Abstract
A silicon oxide of a film thickness of about 50 nm is formed on a surface of a silicon substrate by thermal oxidation. Silver is implanted into the silicon oxide with implantation energy of about 30 keV by a negative ion implantation method. By subjecting the silicon oxide, into which the silver has been implanted, to heat treatment at a temperature of not lower than 200° C. and lower than the melting point of silver, silver particles are formed. By oxidizing the surface portions of the fine particles by heat treatment in an oxidizing atmosphere, silver oxide is formed as a coating layer.
Claims16
A fine particle-containing body comprising:
- a first layer;
- a second layer;
- a medium that is formed between the first layer and the second layer and made of a first material;
- one or more fine particles that are located in the medium and are made of a second material;
- and
- a coating layer that covers said or each fine particle and is made of a third material,
- the second material being a material that has a function to retain an electric charge, and
- the third material being a material whose electrical conductivity is lower than that of the second material.
Dependencies are inferred from the claim text.