Crystals for a semiconductor radiation detector and method for making the crystals
AssigneeGeneral Electric Company
InventorsMark D'Evelyn, Dong-Sil Park, John Leman
Life of this patent
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Abstract
A method for a growing solid-state, spectrometer grade II-VI crystal using a high-pressure hydrothermal process including the following steps: positioning seed crystals in a growth zone of a reactor chamber; positioning crystal nutrient material in the nutrient zone of the chamber; filling the reactor with a solvent fluid; heating and pressuring the chamber until at least a portion of the nutrient material dissolves in the solvent and the solvent becomes supercritical in the nutrient zone; transporting supercritical from the nutrient zone to the growth zone, and growing the seed crystals as nutrients from the supercritical fluid deposit on the crystals.
Claims20
A solid-state, spectrometer grade crystal, wherein the crystal is formed by a process comprising:
- positioning a seed crystal in a growth zone of a reactor chamber;
- positioning crystal nutrient material in the nutrient zone of the reactor chamber;
- filling the reactor chamber with a solvent fluid;
- heating and pressuring the reactor chamber until at least a portion of the nutrient material dissolves in the solvent and the solvent becomes supercritical with the nutrient material in the nutrient zone;
- transporting the supercritical solvent from the nutrient zone to the growth zone, and
- growing the crystal as nutrients from the supercritical solvent deposit on the seed crystal.
A solid-state, spectrometer grade II-VI crystal, wherein the crystal is formed by a process comprising:
- positioning a seed crystal in a growth zone of a reactor chamber;
- positioning crystal nutrient material in the nutrient zone of the reactor chamber, wherein a baffle in the reactor chamber separates the nutrient zone and the growth zone;
- filling the reactor chamber with a solvent fluid;
- heating and pressuring the reactor chamber until at least a portion of the nutrient material dissolves in the solvent and the solvent becomes supercritical with the nutrient material in the nutrient zone;
- transporting the supercritical solvent from the nutrient zone, through the baffle and to the growth zone, and
- growing the seed crystals as nutrients from the supercritical solvent deposit on the crystals at a growth zone temperature of at least 375° C. and at a reactor pressure at least 700 bar.
Dependencies are inferred from the claim text.