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US 2007/0177646 A1Published application
Semiconductor laser diode
AssigneeSharp Kabushiki Kaisha
InventorsRyuichi Sogabe, Yoshinobu Kawaguchi, Takeshi Kamikawa
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Abstract
A semiconductor laser diode comprising a semiconductor substrate having an active layer with a pair of cavity facets opposed to each other on both ends of active layer as well as a first dielectric film of an oxide and a second dielectric film of an oxynitride successively stacked on one cavity facet has sufficient initial characteristics with a film structure having excellent heat radiability for allowing stable high-output lasing over a long period without reducing a catastrophic optical damage level on an emission end.
Claims10
A semiconductor laser diode comprising:
- a semiconductor substrate having an active layer with a pair of cavity facets opposed to each other on both ends of said active layer;
- and
- a first dielectric film of an oxide and a second dielectric film of an oxynitride successively stacked on one of said cavity facets.
Dependencies are inferred from the claim text.