Semiconductor laser device
AssigneeSharp Kabushiki Kaisha
InventorHiroyuki Hosoba
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Abstract
A semiconductor laser device, comprising a buffer layer of a first conductivity type, a clad layer of the first conductivity type, an active layer and a clad layer of a second conductivity type formed on a semiconductor substrate of the first conductivity type, wherein a band gap in the buffer layer of the first conductivity type has a value which is greater than a band gap of the semiconductor substrate and smaller than a band gap of the clad layer of the first conductivity type, and an impurity concentration in the buffer layer of the first conductivity type is higher than an impurity concentration in the clad layer of the first conductivity type.
Claims11
A semiconductor laser device, comprising a buffer layer of a first conductivity type, a clad layer of the first conductivity type, an active layer and a clad layer of a second conductivity type formed on a semiconductor substrate of the first conductivity type,
- wherein a band gap in the buffer layer of the first conductivity type has a value which is greater than a band gap of the semiconductor substrate and smaller than a band gap of the clad layer of the first conductivity type, and
- an impurity concentration in the buffer layer of the first conductivity type is higher than an impurity concentration in the clad layer of the first conductivity type.
Dependencies are inferred from the claim text.