Method for multiple step programming a memory cell

A method for programming a memory cell, comprising:

• providing a plurality of memory cells in a memory array, wherein the plurality of memory cells comprise the memory cell, and wherein each of the plurality of memory cells comprise a dielectric layer adjacent a charge storage layer, the dielectric layer having an edge portion thicker than an inner portion;
• injecting charge into charge storage layers of at least a portion of the plurality of memory cells which results in a desired programmed charge in edge portions of the charge storage layers of the at least a portion of the plurality of memory cells and an undesired programmed charge in inner portions of the charge storage layers of the at least a portion of the plurality of memory cells;
• and
• using charge tunneling to simultaneously substantially remove the undesired programmed charge from the charge storage layers of the at least a portion of the plurality of memory cells using charge tunneling.