Back to results
US 2007/0177432 A1Published application
Phase change memory latch
AssigneeOvonyx, Inc.
InventorsEdward Spall, Tyler Lowrey
Life of this patent
Estimating the term…
Abstract
A non-volatile memory latch may be formed with a phase change memory layer. Such a latch may be faster and more easily integrated into main stream semiconductor processes than conventional latches that use non-volatile memory elements such as flash memory.
Claims26
A method comprising:
- latching a binary state in a latch including a phase change memory element having a chalcogenide layer.
A latch comprising:
- a phase change memory element;
- a programming circuit coupled to said element;
- and
- a reading circuit coupled to said element.
1 more element
An integrated circuit comprising:
- a logic component;
- and
- a latch including a phase change memory cell coupled to said component.
Dependencies are inferred from the claim text.