Nonvolatile memory device and method thereof

Abstract

A nonvolatile memory device and method thereof are provided. The example method may include applying a first bias voltage to a gate electrode, applying a second bias voltage to a substrate to obtain a first voltage potential difference between the gate electrode and the substrate and applying a third bias voltage to a first impurity region to obtain a second voltage potential difference between the substrate and the first impurity region, the first and third bias voltages being positive and the second bias voltage being negative. The example nonvolatile memory device may include a gate electrode receiving a first bias voltage, a substrate receiving a second bias voltage, the first and second bias voltages forming a first voltage potential difference between the gate electrode and the substrate and a first impurity region receiving a third bias voltage, the second and third bias voltages forming a second voltage potential difference between the first impurity region and the substrate, the first and third bias voltages being positive and the second bias voltage being negative.

Dependencies are inferred from the claim text.