Nanoelectromechanical memory cells and data storage devices

A system comprising:

• a base;
• a nanometer-scale beam coupled to said base having a first portion that is free-to-move;
• a first charge containment layer coupled to said base in the proximity of said first free-moving portion, wherein said charge containment layer is operable to receive, and store, a first charge profile without moving said nanometer-scale beam and said nanometer-scale beam is not operable to physically touch said first charge containment layer;
• and
• a first sense contact placed in the proximity of said first free-moving portion and exposed to a magnetic field.

A system comprising:

• a base;
• a nanometer-scale beam coupled to said base having a first portion that is free-to-move;
• a first charge containment layer coupled to said base in the proximity of said first free-moving portion, wherein said charge containment layer is operable to receive, and store, a first charge profile without moving said nanometer-scale beam and said nanometer-scale beam is not operable to physically touch said first charge containment layer;
• an isolation layer;
• a first WRITE/ERASE contact placed between said isolation layer and said charge containment layer;
• and
• WRITE/ERASE electrical signals that are provided to said WRITE/ERASE contact, wherein said WRITE/ERASE electrical signals write said first charge profile into said charge containment layer.

A system comprising:

• a base;
• a nanometer-scale beam coupled to said base having a first portion that is free-to-move;
• a first charge containment layer coupled to said base in the proximity of said first free-moving portion, wherein said charge containment layer is operable to receive, and store, a first charge profile without moving said nanometer-scale beam and said nanometer-scale beam is not operable to physically touch said first charge containment layer, wherein said charge profile is stored in said first charge containment layer;
• an isolation layer;
• a first WRITE/ERASE contact placed between said isolation layer and said charge containment layer;
• and
• WRITE/ERASE electrical signals that are provided to said WRITE/ERASE contact, wherein said WRITE/ERASE electrical signals erase said charge profile from said first charge containment layer.

A system comprising:

• a base;
• a nanometer-scale beam coupled to said base having a first portion that is free-to-move;
• a first charge containment layer coupled to said base in the proximity of said first free-moving portion, wherein said charge containment layer is operable to receive, and store, a first charge profile without moving said nanometer-scale beam and said nanometer-scale beam is not operable to physically touch said first charge containment layer;
• a first transistor having an emitter, base, and collector terminal, wherein said emitter terminal is coupled to said charge containment layer;
• a control circuit coupled to said base terminal;
• and
• a first WRITE/ERASE contact coupled to said collector terminal, wherein said first transistor comprises a nanometer-scale transistor.

A system comprising:

• a base;
• a nanometer-scale beam coupled to said base having a first portion that is free-to-move;
• a first charge containment layer coupled to said base in the proximity of said first free-moving portion, wherein said charge containment layer is operable to receive, and store, a first charge profile without moving said nanometer-scale beam and said nanometer-scale beam is not operable to physically touch said first charge containment layer;
• a transistor having an emitter, base, and collector terminal, wherein said collector terminal is coupled to said charge containment layer;
• a control circuit coupled to said base terminal;
• and
• a first WRITE/ERASE contact coupled to said emitter terminal, wherein said transistor comprises a nanometer-scale transistor.