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US 2007/0177310 A1Published application
Magnetoresistive effect element, magnetic head and magnetic reproducing apparatus
AssigneeKabushiki Kaisha Toshiba
InventorsHiromi YUASA, Masatoshi Yoshikawa, Katsuhiko Koui, Hitoshi Iwasaki, Masashi Sahashi
Life of this patent
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Abstract
A spin valve type magnetoresistive effect element for vertical electric conduction includes a magnetoresistive effect film in which a resistance adjustment layer made of a material containing conductive carriers not more than 1022/cm3 is inserted. Thus the resistance value of a portion in change of spin-relied conduction is raised to an adequate valve, thereby to increase the resistance variable amount.
Claims16
A magnetoresistive effect element comprising:
- a magnetoresistive effect film including a magnetization-pinned layer having a magnetic film whose direction of magneization is pinned substantially in one direction, a magnetization free layer having a magnetic film whose direction of magnetization varies in response to an external magnetic field, a nonmagnetic metallic intermediate layer interposed between said magnetization-pinned layer and said magnetization free layer, and a resistance adjustment layer interposed between said magnetization-pinned layer and said magnetization free layer and containing, as a major component, one material selected from the group consisting of CoSi, (Co1-xFex)si, (Co1-xNix)Si, (Co1-xMnx)Si, (Co1-xCrx)Si and FeSi;
- and
- a pair of electrodes electrically coupled to said magnetoresistive effect film to supply a sense current substantially vertically of the film plane of said magnetoresistive effect film.
A magnetoresistive effect element comprising:
- a magnetoresistive effect film including a magnetization-pinned layer having a magnetic film whose direction of magnetization is pinned substantially in one direction, a magnetization free layer having a magnetic film whose direction of magnetization varies in response to an external magnetic field, and a nonmagnetic metallic intermediate layer interposed between said magnetization-pinned layer and said magnetization free layer;
- and
- a pair of electrodes eletrically coupled to said magnetoresistive effect film to supply a sense current substantially vertically of the film plane of said magnetoresistive effect film,
- wherein said nonmagnetic intermediate layer is a resistance adjustment layer containing, as a major component, one material selected from the group consisting of CoSi, (Co1-xFex)Si, (Co1-xNix)Si, (Co1-xMnx)Si, (Co1-xCrx)Si and FeSi.
1 more element
A magnetic head comprising a magnetoresistive effect element having:
- a magnetoresistive effect film including a magnetization-pinned layer having a magnetic film whose direction of magnetization is pinned substantially in one direction, a magnetization free layer having a magnetic film whose direction of magnetization varies in response to an external magnetic field, a nonmagnetic metallic intermediate layer interposed between said magnetization-pinned layer and said magnetization free layer, and a resistance adjustment layer interposed between said magnetization-pinned layer and said magnetization free layer and containing, as a major component, one material selected from the group consisting of CoSi, (Co1-xFex)Si, (Co1-xNix)Si, (Co1-xMnx)Si, (Co1-xCrx)Si and FeSi;
- and
- a pair of electrodes electrically coupled to said magnetoresistive effect film to supply a sense current substantially vertically of the film place of said magnetoresistive effect film.
A magnetic head comprising a magnetoresistive effect element having:
- a magnetoresistive effect film including a magnetization-pinned layer having a magnetic film whose direction of magnetization is pinned substantially in one direction, a magnetization free layer having a magnetic film whose direction of magnetization varies in response to an external magnetic field, and a nonmagnetic metallic intermediate layer interposed between said magnetization-pinned layer and said magnetization free layer;
- and
- a pair of electrodes electrically coupled to said magnetoresistive effect film to supply a sense current substantially vertically of the film plane of said magnetoresistive effect film,
- wherein said nonmagnetic intermediate layer is resistance adjustment layer containing, as a major component, one material selected from the group consisting of CoSi, (Co1-xFex)Si, (Co1-xNix)Si, (Co1-xMnx)Si, (Co1-xCrx)Si and FeSi.
1 more element
A magnetic reproducing apparatus which reads information magnetically recorded in a magnetic recording medium, said magnetic reproducing apparatus comprising a magnetoresistive effect element having:
- a magnetoresistive effect film including a magnetization-pinned layer having a magnetic film whose direction of magnetization is pinned substantially in one direction, a magnetization free layer having a magnetic film whose direction of magnetization varies in response to an external magnetic field, a nonmagnetic metallic intermediate layer interposed between said magnetization-pinned layer and said magnetization free layer, and a resistance adjustment layer interposed between said magnetization-pinned layer and said magnetization free layer and containing, as a major component, one material selected from the group consisting of CoSi, (Co1-xFex)Si, (Co1-xNix)Si, (Co1-xMnx)Si, (Co1-xCrx)Si and FeSi;
- and
- a pair of electrodes electrically coupled to said magnetoresistive effect film to supply a sense current substantially vertically of the fihn plane of said magnetoresistive effect film.
A magnetic reproducing apparatus which reads information magnetically recorded in a magnetic recording medium, said magnetic reproducing apparatus comprising a magnetoresistive effect element having:
- a magnetoresistive effect film including a magnetization-pinned layer having a magnetic film whose direction of magnetization is pinned substantially in one direction, a magnetization free layer having a magnetic film whose direction of magnetization varies in response to an external magnetic field, and a nonmagnetic metallic intermediate layer interposed between said magnetization-pinned layer and said magnetization free layer;
- and
- a pair of electrodes electrically coupled to said magnetoresistive effect film to supply a sense current substantially vertically of the film plane of said magnetoresistive effect film;
- wherein said nomagnetic intermediate layer is a resistance adjustment layer containing, as a major component, one material selected from the group consisting of CoSi, (Co1-xFex)Si, (Co1-xNix)Si, (Co1-xMnx)Si, (Co1-xCrx)Si and FeSi.
1 more element
Dependencies are inferred from the claim text.