Monolithically integrated circuit
AssigneeInfineon Technologies AG
InventorTorkel Arnborg
Life of this patent
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Abstract
A monolithically integrated circuit, particularly an integrated circuit for radio frequency power applications, has a transistor (11; 51), preferably a power LDMOS transistor, and a spiral inductor (12; 26; 41; 52, 53), preferably an RF blocking inductor. The spiral inductor is arranged on top of the transistor, whereby an electromagnetic coupling between the spiral inductor and the transistor is not typically possible to avoid. However, the transistor has a finger type layout (13a-k, 14a-f) to prevent any significant eddy currents caused by the electromagnetic coupling from occurring. The chip area needed for the circuit is strongly reduced by such an arrangement.
Claims20
A monolithically integrated circuit comprising a transistor and a spiral inductor, wherein
- said spiral inductor is arranged on top of said transistor, whereby an electromagnetic coupling between said spiral inductor and said transistor is obtained, and
- said transistor has a finger type layout to prevent any significant eddy currents caused by said electromagnetic coupling from occurring.
An integrated circuit for radio frequency applications comprising a transistor and a spiral inductor, wherein
- said spiral inductor is arranged on top of said transistor, whereby an electromagnetic coupling between said spiral inductor and said transistor is obtained, and
- said transistor has a finger type layout to prevent any significant eddy currents caused by said electromagnetic coupling from occurring, wherein a lateral dimension of said spiral inductor and a lateral dimension of said transistor are of the same order of magnitude, and wherein said spiral inductor is formed in metallization layers of said integrated circuit, said metallization layers being separated from said transistor by a passivation layer only.
A monolithically integrated circuit comprising:
- a transistor comprising a finger type layout to prevent any significant eddy currents caused by said electromagnetic coupling from occurring and comprising multiple gate and multiple drain fingers, and
- a spiral inductor arranged on top of said transistor, wherein an electromagnetic coupling between said spiral inductor and said transistor is obtained, said spiral inductor covering at least a portion of a plurality of multiple gate fingers as seen from above, and leaving common gate and drain connections interconnecting said multiple gate and drain fingers, respectively, uncovered as seen from above.
Dependencies are inferred from the claim text.