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US 2007/0176654 A1Published application
Semiconductor memory device, power supply detector and semiconductor device
AssigneeKabushiki Kaisha Toshiba
InventorsNoriyasu Kumazaki, Keiji Maruyama
Life of this patent
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Abstract
A semiconductor memory device comprises a n-channel type MOSFET in which a drain and a gate are connected to an external power supply and a source and a back gate are connected each other, a node connected to the source and the back gate of the n-channel type MOSFET, and a detector for detecting an input of the external power supply based on a potential of the node
Claims19
A semiconductor memory device, comprising:
- an n-channel type MOSFET in which a drain and a gate thereof are connected to an external power supply, and a source and a back gate thereof are connected each other;
- a node which is connected to the source and the back gate of the n-channel type MOSFET;
- and
- a detector for detecting an applying of the external power supply based on a potential of the node.
1 more element
A power supply detector, comprising:
- a first n-channel type MOSFET in which a drain and a gate thereof are connected to a power supply, and a source and a back gate thereof are connected each other;
- and
- a second n-channel type MOSFET and a first p-channel type MOSFET which are connected complementarily each other, each of the second n-channel type MOSFET and the first p-channel type MOSFET having a gate connected to the source and the back gate of the first n-channel type MOSFET and a drain outputting a detection output which detects an applying of the power supply.
A semiconductor device which has a power detector, comprising:
- a first n-channel type MOSFET in which a drain and a gate thereof are connected to an external power supply, and a source and a back gate thereof are connected each other;
- and
- a second n-channel type MOSFET and a first p-channel type MOSFET which are connected complementarily each other, each of the second n-channel type MOSFET and the first p-channel type MOSFET having a gate connected to the source and the back gate of the first n-channel type MOSFET and a drain outputting a detection output which detects an applying of the external power supply.
Dependencies are inferred from the claim text.