Semiconductor probe with high resolution resistive tip having doping control layer and method of fabricating the same
AssigneesSamsung Electroncis Co., Ltd., Seoul National University Industry Foundation
InventorsJu-hwan Jung, Jun-soo Kim, Hyung-cheol Shin, Seung-bum Hong
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Abstract
A semiconductor probe and a method of fabricating the same are provided. The semiconductor probe includes a cantilever doped with first impurities, a resistive tip which protrudes from an end of the cantilever and doped lightly with second impurities, doping control layers formed on both sides of a protruding portion of the resistive tip, and first and second electrode regions formed under the doping control layers and doped heavily with the second impurities.
Claims12
A semiconductor probe comprising:
- a cantilever doped with first impurities;
- a resistive tip which protrudes from an end of the cantilever and which is doped lightly with second impurities;
- doping control layers formed on opposite sides of a protruding portion of the resistive tip;
- and
- first and second electrode regions formed under the doping control layers and doped heavily with the second impurities.
A method of fabricating a semiconductor probe having a resistive tip formed on an end of a cantilever, the method comprising:
- forming a stripe pattern mask on a substrate doped with first impurities;
- forming a stripe pattern protruding portion by etching the substrate using the stripe pattern mask;
- forming doping control layers on opposite sides of the stripe pattern protruding portion;
- and
- forming first and second electrode regions by doping the substrate with second impurities through an exposed surface of the substrate.
Dependencies are inferred from the claim text.