Light emitting material, light emitting device, and electronic device

A light emitting material comprising:

• a base material;
• a material selected from the group consisting of copper fluoride, copper chloride, copper iodide, copper bromide, copper nitride, copper phosphide, silver fluoride, silver chloride, silver iodide, silver bromide, gold chloride, gold bromide, platinum chloride, and a combination thereof;
• and
• an impurity element,
• wherein the base material is a material selected from the group consisting of zinc sulfide, cadmium sulfide, calcium sulfide, yttrium sulfide, gallium sulfide, strontium sulfide, barium sulfide, zinc oxide, yttrium oxide, aluminum nitride, gallium nitride, indium nitride, zinc selenide, zinc telluride, strontium gallium sulfide, and a combination thereof, and
• wherein the impurity element is at least an element selected from the group consisting of lithium, sodium, potassium, rubidium, cesium, nitrogen, phosphorus, arsenic, antimony, and bismuth.

A light emitting material comprising:

• a base material;
• an impurity element;
• and
• a material selected from the group consisting of lithium fluoride, lithium chloride, lithium iodide, copper bromide, and sodium chloride, boron nitride, aluminum nitride, aluminum antimonide, gallium phosphide, gallium arsenide, indium phosphide, indium arsenide, indium antimonide, and a combination thereof,
• wherein the base material is a material selected from the group consisting of zinc sulfide, cadmium sulfide, calcium sulfide, yttrium sulfide, gallium sulfide, strontium sulfide, barium sulfide, zinc oxide, yttrium oxide, aluminum nitride, gallium nitride, indium nitride, zinc selenide, zinc telluride, strontium gallium sulfide, and a combination thereof, and
• wherein the impurity element is at least an element selected from the group consisting of copper, silver, gold, platinum, and silicon.

A light emitting device comprising:

• a pair of electrodes;
• a light emitting layer including a light emitting material between the pair of electrodes;
• and
• an insulating layer between the light emitting layer and one of the pair of electrodes,
• wherein the light emitting material comprises a base material, a first impurity element, a second impurity element, and a third impurity element,
• wherein the base material is a material selected from the group consisting of zinc sulfide, cadmium sulfide, calcium sulfide, yttrium sulfide, gallium sulfide, strontium sulfide, barium sulfide, zinc oxide, yttrium oxide, aluminum nitride, gallium nitride, indium nitride, zinc selenide, zinc telluride, strontium gallium sulfide, and a combination thereof,
• wherein the first impurity element is at least an element selected from the group consisting of copper, silver, gold, platinum, and silicon,
• wherein the second impurity element is at least an element selected from the group consisting of fluorine, chlorine, bromine, iodine, boron, aluminum, gallium, indium, and thallium, and
• wherein the third impurity element is at least an element selected from the group consisting of lithium, sodium, potassium, rubidium, cesium, nitrogen, phosphorus, arsenic, antimony, and bismuth.

Alight emitting device comprising:

• a pair of electrodes;
• a light emitting layer including a light emitting material between the pair of electrodes;
• and
• an insulating layer between the light emitting layer and one of the pair of electrodes,
• wherein the light emitting material comprises a base material, a material, and an impurity element,
• wherein the material is at least one selected from the group consisting of copper fluoride, copper chloride, copper iodide, copper bromide, copper nitride, copper phosphide, silver fluoride, silver chloride, silver iodide, silver bromide, gold chloride, gold bromide, platinum chloride, and a combination thereof,
• wherein the base material is a material selected from the group consisting of zinc sulfide, cadmium sulfide, calcium sulfide, yttrium sulfide, gallium sulfide, strontium sulfide, barium sulfide, zinc oxide, yttrium oxide, aluminum nitride, gallium nitride, indium nitride, zinc selenide, zinc telluride, strontium gallium sulfide, and a combination thereof, and
• wherein the impurity element at least an element selected from the group consisting of lithium, sodium, potassium, rubidium, cesium, nitrogen, phosphorus, arsenic, antimony, and bismuth.

A light emitting device comprising:

• a pair of electrodes;
• a light emitting layer including a light emitting material between the pair of electrodes;
• and
• an insulating layer between the light emitting layer and one of the pair of electrodes,
• wherein the light emitting material comprises a base material, a material, and an impurity element,
• wherein the material is a material selected from the group consisting of lithium fluoride, lithium chloride, lithium iodide, copper bromide, and sodium chloride, boron nitride, aluminum nitride, aluminum antimonide, gallium phosphide, gallium arsenide, indium phosphide, indium arsenide, indium antimonide, and a combination thereof,
• wherein the base material is a material selected from the group consisting of zinc sulfide, cadmium sulfide, calcium sulfide, yttrium sulfide, gallium sulfide, strontium sulfide, barium sulfide, zinc oxide, yttrium oxide, aluminum nitride, gallium nitride, indium nitride, zinc selenide, zinc telluride, strontium gallium sulfide, and a combination thereof, and
• wherein the impurity element is at least an element selected from the group consisting of copper, silver, gold, platinum, and silicon.