Phoshor and light-emitting diode

A phosphor of SiC excited by an external light source for emitting light, doped with N and at least one of B and Al.

A method of manufacturing a phosphor of SiC excited by an external light source for emitting fluorescence having a wavelength of 500 nm to 750 nm with a peak wavelength in the range of 500 nm to 650 nm and doped with N and B so that the concentration of either N or B is 1015/cm3 to 1018/cm3 and the concentration of either B or N is 1016/cm3 to 1019/cm3,

• by forming an SiC crystal by sublimation recrystallization with a B source of LaB6, B4C, TaB2, NbB2, ZrB2, HfB2, BN or carbon containing B.

A method of manufacturing a phosphor of SiC excited by an external light source for emitting fluorescence having a wavelength of 500 nm to 750 nm with a peak wavelength in the range of 500 nm to 650 nm and doped with N and B so that the concentration of either N or B is 1015/cm3 to 1018/cm3 and the concentration of either B or N is 1016/cm3 to 1019/cm3,

• by thermally diffusing a B source of simple B, LaB6, B4C, TaB2, NbB2, ZrB2, HfB2 or BN into SiC under a vacuum or an inert gas atmosphere at a temperature of at least 1500° C.

A substrate for a semiconductor consisting of a 6H—SiC single-crystalline phosphor excited by an external light source for emitting light and doped with N and at least one of B and Al.

A method of manufacturing a substrate for a semiconductor consisting of a 6H—SiC single-crystalline phosphor excited by an external light source for emitting fluorescence having a wavelength of 500 nm to 750 nm with a peak wavelength in the range of 500 nm to 650 nm and doped with N and B so that the concentration of either N or B is 1015/cm3 to 1018/cm3 and the concentration of either B or N is 1016/cm3 to 1019/cm3, comprising the steps of:

• thermally diffusing a B source of simple B, LaB6, B4C, TaB2, NbB2, ZrB2, HfB2 or BN into SiC under a vacuum or an inert gas atmosphere at a temperature of at least 1500° C.;
• and
• removing a surface layer.

A method of manufacturing a substrate for a semiconductor consisting of a 6H—SiC single-crystalline phosphor excited by an external light source for emitting fluorescence having a wavelength of 500 nm to 750 nm with a peak wavelength in the range of 500 nm to 650 nm and doped with N and B so that the concentration of either N or B is 1015/cm3 to 1018/cm3 and the concentration of either B or N is 1016/cm3 to 1019/cm3, wherein

• atmosphere gas in crystal growth contains N2 gas of 1% to 30% in gas partial pressure, and raw material SiC contains 0.05 mol % to 15 mol % of a B source, and an SiC crystal is formed by sublimation recrystallization.

Powder for a semiconductor consisting of a 6H—SiC single-crystalline phosphor excited by an external light source for emitting fluorescence having a wavelength of 500 nm to 750 nm with a peak wavelength in the range of 500 nm to 650 nm, having a particle diameter of 2 μm to 10 μm and a central particle diameter of 3 μm to 6 μm.

A light-emitting diode comprising a substrate for a semiconductor consisting of a 6H—SiC single-crystalline phosphor doped with N and at least one of B and Al and a light-emitting device of a nitride semiconductor formed on said substrate.

A light-emitting diode having one or at least two layers consisting of a 6H—SiC single-crystalline phosphor doped with N and at least one of B and Al on a substrate of SiC for a semiconductor and comprising a light-emitting device of a nitride semiconductor on said 6H—SiC single-crystalline phosphor layer(s).