Semiconductor device
AssigneesHitachi, Ltd., Renesas Technology Corp.
InventorsYasuo Osone, Kenya Kawano, Chiko Yorita, Yu Hasegawa, Yuji Shirai, Naotaka Tanaka, Seiichi Tomoi, Hiroshi Okabe
Life of this patent
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Abstract
Heating elements different in heat generating timing are laminated in a stacked state, and the heating element close to a wiring substrate is allowed to function as a heat diffusion plate for another heating element.
Claims20
A semiconductor device in which a second semiconductor element is laminated in a stacked state on a first semiconductor element mounted on a wiring substrate by flip-chip connection,
- wherein the first semiconductor element and second semiconductor element generate heat at different time, and the heat generating areas of the first semiconductor element and second semiconductor element comprise a mounting structure included in a superposed range seen from the normal direction of a main circuit surface of the wiring substrate.
A semiconductor device in which a second semiconductor element is laminated in a stacked state on a first semiconductor element mounted on a wiring substrate by flip-chip connection,
- wherein the first semiconductor element and second semiconductor element generate heat at different time, and when the second semiconductor element performs a heat generating operation, the first semiconductor element functions as a heat diffusion plate that diffuses a heat generating loss arisen from the second semiconductor element in the direction parallel with a main circuit surface of the wiring substrate.
A radio high frequency circuit device comprising a radio frequency integrated circuit including at least a transmitting and receiving circuit such as an antenna, antenna switch or antenna multicoupler and band pass filter and the like, and a transmission power amp (power amplifier)and the like, further comprising a structure in which the radio frequency integrated circuit including the transmitting and receiving circuit such as the antenna switch or the antenna multicoupler and band pass filter and the like, and the power amp are integrated into one semiconductor package,
- wherein the radio frequency integrated circuit including the transmitting and receiving circuit and the power amp are constituted by different semiconductor elements within the package, and on the semiconductor element including the radio frequency integrated circuit, the semiconductor elements including the power amps are laminated by flip-chip connection.
A semiconductor device comprising a first semiconductor element and a third semiconductor element mounted in parallel on a wiring substrate,
- wherein the first semiconductor element comprises a radio frequency integrated circuit or power amp, and the third semiconductor element comprises a filter.
Dependencies are inferred from the claim text.